Experimental comparisons between tetrakis(dimethylamino)titanium precursor-based atomic-layer-deposited and physical-vapor-deposited titanium-nitride gate for high-performance fin-type metal-oxide-semiconductor field-effect transistors

Tetsuro Hayashida, Kazuhiko Endo, Yongxun Liu, Shin Ichi O'Uchi, Takashi Matsukawa, Yusuke Wataru Mizubayashi, Shinji Migita, Yukinori Morita, Hiroyuki Ota, Hiroki Hashiguchi, Daisuke Kosemura, Takahiro Kamei, Junichi Tsukada, Yuki Ishikawa, Hiromi Yamauchi, Atsushi Ogura, Meishoku Masahara

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