In this study, we successfully introduced an atomic-layer-deposited (ALD) titanium nitride (TiN) gate grown with a tetrakis(dimethylamino)titanium (TDMAT) precursor into fin-type metal-oxide-semiconductor field-effect transistor (FinFET) fabrication for the first time, and comparatively investigated the electrical characteristics, including mobility and threshold voltage (Vth) variation, of the fabricated ALD and physical-vapordeposited (PVD)-TiN gate FinFETs. The ALD-TiN gate FinFETs showed superior conformality to the PVD-TiN gate FinFETs. The electron mobilities of the ALD- and PVD-TiN gate FinFETs were comparable in the small Lg region. It was also confirmed that the ALD-TiN gate FinFETs showed a smaller Vth variation than the PVD-TiN gate FinFETs.
ASJC Scopus subject areas
- Physics and Astronomy(all)