Experimental comparisons between tetrakis(dimethylamino)titanium precursor-based atomic-layer-deposited and physical-vapor-deposited titanium-nitride gate for high-performance fin-type metal-oxide-semiconductor field-effect transistors

Tetsuro Hayashida, Kazuhiko Endo, Yongxun Liu, Shin Ichi O'Uchi, Takashi Matsukawa, Yusuke Wataru Mizubayashi, Shinji Migita, Yukinori Morita, Hiroyuki Ota, Hiroki Hashiguchi, Daisuke Kosemura, Takahiro Kamei, Junichi Tsukada, Yuki Ishikawa, Hiromi Yamauchi, Atsushi Ogura, Meishoku Masahara

Research output: Contribution to journalArticle

Abstract

In this study, we successfully introduced an atomic-layer-deposited (ALD) titanium nitride (TiN) gate grown with a tetrakis(dimethylamino)titanium (TDMAT) precursor into fin-type metal-oxide-semiconductor field-effect transistor (FinFET) fabrication for the first time, and comparatively investigated the electrical characteristics, including mobility and threshold voltage (Vth) variation, of the fabricated ALD and physical-vapordeposited (PVD)-TiN gate FinFETs. The ALD-TiN gate FinFETs showed superior conformality to the PVD-TiN gate FinFETs. The electron mobilities of the ALD- and PVD-TiN gate FinFETs were comparable in the small Lg region. It was also confirmed that the ALD-TiN gate FinFETs showed a smaller Vth variation than the PVD-TiN gate FinFETs.

Original languageEnglish
Article number04DA05
JournalJapanese journal of applied physics
Volume51
Issue number4 PART 2
DOIs
Publication statusPublished - 2012 Apr
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Hayashida, T., Endo, K., Liu, Y., O'Uchi, S. I., Matsukawa, T., Mizubayashi, Y. W., Migita, S., Morita, Y., Ota, H., Hashiguchi, H., Kosemura, D., Kamei, T., Tsukada, J., Ishikawa, Y., Yamauchi, H., Ogura, A., & Masahara, M. (2012). Experimental comparisons between tetrakis(dimethylamino)titanium precursor-based atomic-layer-deposited and physical-vapor-deposited titanium-nitride gate for high-performance fin-type metal-oxide-semiconductor field-effect transistors. Japanese journal of applied physics, 51(4 PART 2), [04DA05]. https://doi.org/10.1143/JJAP.51.04DA05