Experimental characterization of the electronic structure of anatase TiO2: Thermopower modulation

Yuki Nagao; Akira Yoshikawa; Kunihito Koumoto; Takeharu Kato; Yuichi Ikuhara; Hiromichi Ohta

doi:10.1063/1.3507898

Experimental characterization of the electronic structure of anatase TiO₂: Thermopower modulation

Yuki Nagao, Akira Yoshikawa, Kunihito Koumoto, Takeharu Kato, Yuichi Ikuhara, Hiromichi Ohta

Research output: Contribution to journal › Article

21 Citations (Scopus)

Abstract

Thermopower (S) for anatase TiO₂ epitaxial films (n3D: 1017 - 1021 cm-3) and the gate voltage (V_g) dependence of S for thin film transistors (TFTs) based on TiO₂ films were investigated to clarify the electronic density of states around the conduction band bottom. The slope of the S -log n3D plots was -20 μV K^-1, which is an order magnitude smaller than that of semiconductors (-198 μV K^-1), and the S values for the TFTs increased with V_g in the low V_g region, suggesting that the extra tail states are hybridized with the original conduction band bottom.

Original language	English
Article number	172112
Journal	Applied Physics Letters
Volume	97
Issue number	17
DOIs	https://doi.org/10.1063/1.3507898
Publication status	Published - 2010 Oct 25

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Nagao, Y., Yoshikawa, A., Koumoto, K., Kato, T., Ikuhara, Y., & Ohta, H. (2010). Experimental characterization of the electronic structure of anatase TiO₂: Thermopower modulation. Applied Physics Letters, 97(17), [172112]. https://doi.org/10.1063/1.3507898

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