Experimental characterization of the electronic structure of anatase TiO2: Thermopower modulation

Yuki Nagao, Akira Yoshikawa, Kunihito Koumoto, Takeharu Kato, Yuichi Ikuhara, Hiromichi Ohta

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    21 Citations (Scopus)

    Abstract

    Thermopower (S) for anatase TiO2 epitaxial films (n3D: 1017 - 1021 cm-3) and the gate voltage (Vg) dependence of S for thin film transistors (TFTs) based on TiO2 films were investigated to clarify the electronic density of states around the conduction band bottom. The slope of the S -log n3D plots was -20 μV K-1, which is an order magnitude smaller than that of semiconductors (-198 μV K-1), and the S values for the TFTs increased with Vg in the low Vg region, suggesting that the extra tail states are hybridized with the original conduction band bottom.

    Original languageEnglish
    Article number172112
    JournalApplied Physics Letters
    Volume97
    Issue number17
    DOIs
    Publication statusPublished - 2010 Oct 25

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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  • Cite this

    Nagao, Y., Yoshikawa, A., Koumoto, K., Kato, T., Ikuhara, Y., & Ohta, H. (2010). Experimental characterization of the electronic structure of anatase TiO2: Thermopower modulation. Applied Physics Letters, 97(17), [172112]. https://doi.org/10.1063/1.3507898