Abstract
Thermopower (S) for anatase TiO2 epitaxial films (n3D: 1017 - 1021 cm-3) and the gate voltage (Vg) dependence of S for thin film transistors (TFTs) based on TiO2 films were investigated to clarify the electronic density of states around the conduction band bottom. The slope of the S -log n3D plots was -20 μV K-1, which is an order magnitude smaller than that of semiconductors (-198 μV K-1), and the S values for the TFTs increased with Vg in the low Vg region, suggesting that the extra tail states are hybridized with the original conduction band bottom.
Original language | English |
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Article number | 172112 |
Journal | Applied Physics Letters |
Volume | 97 |
Issue number | 17 |
DOIs | |
Publication status | Published - 2010 Oct 25 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)