Using the four-terminal geometry, quasi-Fermi potential profiles in the channel of silicon nanowire (SiNW) metal-oxide-semiconductor field-effect transistors (MOSFETs) have been successfully characterized during MOSFET operation, for the first time. We measured the voltages of two branches attached to the SiNW channel under various conditions of gate and drain voltages for MOSFET operation, and evaluated the quasi-Fermi potential profile. The experimental profile under the strong inversion condition agrees well with the theory. We believe that the implementation of the four-terminal geometry is promising for the evaluation of the energy potential profile in the SiNW channel.
ASJC Scopus subject areas
- Physics and Astronomy(all)