Experimental characterization of quasi-Fermi potential profile in the channel of a silicon nanowire field-effect transistor with four-terminal geometry

Soshi Sato, Kenji Ohmori, Kuniyuki Kakushima, Parhat Ahmet, Kenji Natori, Keisaku Yamada, Hiroshi Iwai

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Using the four-terminal geometry, quasi-Fermi potential profiles in the channel of silicon nanowire (SiNW) metal-oxide-semiconductor field-effect transistors (MOSFETs) have been successfully characterized during MOSFET operation, for the first time. We measured the voltages of two branches attached to the SiNW channel under various conditions of gate and drain voltages for MOSFET operation, and evaluated the quasi-Fermi potential profile. The experimental profile under the strong inversion condition agrees well with the theory. We believe that the implementation of the four-terminal geometry is promising for the evaluation of the energy potential profile in the SiNW channel.

Original languageEnglish
Article number044201
JournalApplied Physics Express
Volume4
Issue number4
DOIs
Publication statusPublished - 2011 Apr

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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