Abstract
The fabrication of high-quality heterojunctions between p-type diamond single-crystalline films and highly oriented n-type ZnO films was discussed. The heterojunctions were fabricated by the deposition of p-type diamond single-crystal films on the Io-type diamond single crystal using a hot filament chemical vapor deposition, and then growing a highly oriented n-type ZnO film on the p-type diamond single crystal film by magnetron sputtering. A model which study the ideality factor of the heterojunction diodes was proposed. Results show that the ideality factors of the p-n junction diode were 1.09 and 6.04 when the forward biases were in the ranges of 0.65-0.75 and 0.75-1.47, respectively.
Original language | English |
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Pages (from-to) | 2427-2429 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 84 |
Issue number | 13 |
DOIs | |
Publication status | Published - 2004 Mar 29 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)