Experimental analysis and theoretical model for anomalously high ideality factors in ZnO/diamond p-n junction diode

Cheng Xin Wang; Guo Wei Yang; Hong Wu Liu; Yong Hao Han; Ji Feng Luo; Chun Xiao Gao; Guang Tian Zou

doi:10.1063/1.1689397

Experimental analysis and theoretical model for anomalously high ideality factors in ZnO/diamond p-n junction diode

Cheng Xin Wang, Guo Wei Yang, Hong Wu Liu, Yong Hao Han, Ji Feng Luo, Chun Xiao Gao, Guang Tian Zou

SCI - Physics

Research output: Contribution to journal › Article › peer-review

97 Citations (Scopus)

Abstract

The fabrication of high-quality heterojunctions between p-type diamond single-crystalline films and highly oriented n-type ZnO films was discussed. The heterojunctions were fabricated by the deposition of p-type diamond single-crystal films on the I_o-type diamond single crystal using a hot filament chemical vapor deposition, and then growing a highly oriented n-type ZnO film on the p-type diamond single crystal film by magnetron sputtering. A model which study the ideality factor of the heterojunction diodes was proposed. Results show that the ideality factors of the p-n junction diode were 1.09 and 6.04 when the forward biases were in the ranges of 0.65-0.75 and 0.75-1.47, respectively.

Original language	English
Pages (from-to)	2427-2429
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	13
DOIs	https://doi.org/10.1063/1.1689397
Publication status	Published - 2004 Mar 29

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Experimental analysis and theoretical model for anomalously high ideality factors in ZnO/diamond p-n junction diode",

abstract = "The fabrication of high-quality heterojunctions between p-type diamond single-crystalline films and highly oriented n-type ZnO films was discussed. The heterojunctions were fabricated by the deposition of p-type diamond single-crystal films on the Io-type diamond single crystal using a hot filament chemical vapor deposition, and then growing a highly oriented n-type ZnO film on the p-type diamond single crystal film by magnetron sputtering. A model which study the ideality factor of the heterojunction diodes was proposed. Results show that the ideality factors of the p-n junction diode were 1.09 and 6.04 when the forward biases were in the ranges of 0.65-0.75 and 0.75-1.47, respectively.",

author = "Wang, {Cheng Xin} and Yang, {Guo Wei} and Liu, {Hong Wu} and Han, {Yong Hao} and Luo, {Ji Feng} and Gao, {Chun Xiao} and Zou, {Guang Tian}",

year = "2004",

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doi = "10.1063/1.1689397",

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T1 - Experimental analysis and theoretical model for anomalously high ideality factors in ZnO/diamond p-n junction diode

AU - Wang, Cheng Xin

AU - Yang, Guo Wei

AU - Liu, Hong Wu

AU - Han, Yong Hao

AU - Luo, Ji Feng

AU - Gao, Chun Xiao

AU - Zou, Guang Tian

PY - 2004/3/29

Y1 - 2004/3/29

N2 - The fabrication of high-quality heterojunctions between p-type diamond single-crystalline films and highly oriented n-type ZnO films was discussed. The heterojunctions were fabricated by the deposition of p-type diamond single-crystal films on the Io-type diamond single crystal using a hot filament chemical vapor deposition, and then growing a highly oriented n-type ZnO film on the p-type diamond single crystal film by magnetron sputtering. A model which study the ideality factor of the heterojunction diodes was proposed. Results show that the ideality factors of the p-n junction diode were 1.09 and 6.04 when the forward biases were in the ranges of 0.65-0.75 and 0.75-1.47, respectively.

AB - The fabrication of high-quality heterojunctions between p-type diamond single-crystalline films and highly oriented n-type ZnO films was discussed. The heterojunctions were fabricated by the deposition of p-type diamond single-crystal films on the Io-type diamond single crystal using a hot filament chemical vapor deposition, and then growing a highly oriented n-type ZnO film on the p-type diamond single crystal film by magnetron sputtering. A model which study the ideality factor of the heterojunction diodes was proposed. Results show that the ideality factors of the p-n junction diode were 1.09 and 6.04 when the forward biases were in the ranges of 0.65-0.75 and 0.75-1.47, respectively.

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