The fabrication of high-quality heterojunctions between p-type diamond single-crystalline films and highly oriented n-type ZnO films was discussed. The heterojunctions were fabricated by the deposition of p-type diamond single-crystal films on the Io-type diamond single crystal using a hot filament chemical vapor deposition, and then growing a highly oriented n-type ZnO film on the p-type diamond single crystal film by magnetron sputtering. A model which study the ideality factor of the heterojunction diodes was proposed. Results show that the ideality factors of the p-n junction diode were 1.09 and 6.04 when the forward biases were in the ranges of 0.65-0.75 and 0.75-1.47, respectively.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)