Experimental analysis and theoretical model for anomalously high ideality factors in ZnO/diamond p-n junction diode

Cheng Xin Wang, Guo Wei Yang, Hong Wu Liu, Yong Hao Han, Ji Feng Luo, Chun Xiao Gao, Guang Tian Zou

Research output: Contribution to journalArticlepeer-review

97 Citations (Scopus)

Abstract

The fabrication of high-quality heterojunctions between p-type diamond single-crystalline films and highly oriented n-type ZnO films was discussed. The heterojunctions were fabricated by the deposition of p-type diamond single-crystal films on the Io-type diamond single crystal using a hot filament chemical vapor deposition, and then growing a highly oriented n-type ZnO film on the p-type diamond single crystal film by magnetron sputtering. A model which study the ideality factor of the heterojunction diodes was proposed. Results show that the ideality factors of the p-n junction diode were 1.09 and 6.04 when the forward biases were in the ranges of 0.65-0.75 and 0.75-1.47, respectively.

Original languageEnglish
Pages (from-to)2427-2429
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number13
DOIs
Publication statusPublished - 2004 Mar 29

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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