Experiment and device simulation for photo-electron overflow characteristics on a pixel-shared CMOS image sensor using lateral overflow gate

Shin Sakai, Yoshiaki Tashiro, Lei Hou, Shigetoshi Sugawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A wide dynamic range CMOS image sensor with lateral overflow integration capacitor sharing two pixels by using lateral overflow gate (LO-gate) which directly connect the photodiode and the overflow photoelectron integration capacitor (Cs) has been developed. In this paper, the characteristics of the saturated-photoelectrons overflowing to the floating diffusion (FD) and to the Cs have been discussed through the comparison of the results of experiments and device simulations. It is possible to integrate all the saturated photoelectrons in the Cs without leaking to the shared FD by controlling the voltages of the gate electrodes of the transfer transistor and the LO-gate in the pixel which strong light irradiates. The CMOS image sensor consisting of 1/3.3 inch optical format, 3 μm pixel pitch and 1280(H) × 960(V) pixels was fabricated by a 0.18 μm 2P3M CMOS technology with a buried pinned photodiode process and has achieved 84 μV/e- photo-electric conversion gain, 6.9 × 104 e- full well capacity and 90 dB dynamic range in one exposure.

Original languageEnglish
Title of host publicationProceedings of SPIE-IS and T Electronic Imaging - Sensors, Cameras, and Systems for Industrial/Scientific Applications XI
DOIs
Publication statusPublished - 2010 Mar 16
EventSensors, Cameras, and Systems for Industrial/Scientific Applications XI - San Jose, CA, United States
Duration: 2010 Jan 192010 Jan 21

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7536
ISSN (Print)0277-786X

Other

OtherSensors, Cameras, and Systems for Industrial/Scientific Applications XI
CountryUnited States
CitySan Jose, CA
Period10/1/1910/1/21

Keywords

  • CMOS image sensor
  • Device sharing
  • Device simulation
  • High full well capacity
  • High resolution

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Experiment and device simulation for photo-electron overflow characteristics on a pixel-shared CMOS image sensor using lateral overflow gate'. Together they form a unique fingerprint.

Cite this