Expanded self-limiting growth condition of InP using alternate trimethylindium and tertiarybutylphosphine supply in ultrahigh vacuum

Nobuyuki Otsuka, Jun Ichi Nishizawa, Hideyuki Kikuchi, Yutaka Oyama

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)

Abstract

The alternate injection of trimethylindium (TMI) and tertiarybutylphosphine (TBP) without precracking was studied to expand the self-limiting growth conditions of an InP layer on InP substrates in ultrahigh vacuum. The range of growth conditions for self-limiting growth using TMI expanded two-fold compared to that using triethylindium (TEI). The carbon concentration in the InP layer grown using TMI was almost the same as that using TEI under self-limiting growth conditions. The growth rate of approximately 0.75 monolayers per cycle at the plateau was achieved on (0 0 1 )-(1 1 1)A-, and (1 1 1)B-oriented InP substrates. It was suggested that the decomposition process of TMI is identical to that of TEI, and that the growth rate with the self-limiting growth conditions results from the surface occupancy of phosphorus precursors.

Original languageEnglish
Pages (from-to)252-257
Number of pages6
JournalJournal of Crystal Growth
Volume209
Issue number2-3
DOIs
Publication statusPublished - 2000 Jan 1
EventThe 7th International Conference on Chemical Beam Epitaxy and Related Growth Techniques - Tsukuba, Jpn
Duration: 1999 Jul 281999 Jul 30

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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