Existence of a stable intermixing phase for monolayer Ge on Si(001)

H. W. Yeom, M. Sasaki, S. Suzuki, S. Sato, S. Hosoi, M. Iwabuchi, K. Higashiyama, H. Fukutani, M. Nakamura, T. Abukawa, S. Kono

Research output: Contribution to journalArticlepeer-review

41 Citations (Scopus)

Abstract

A monolayer adsorption of Ge on a single-domain Si(001)2 × 1 surface has been investigated by X-ray excited Auger electron diffraction (AED) and scanning tunneling microscopy. Contrary to the common belief, a significant intermixing of Ge down to at least the fourth layer is identified. This intermixing is found to progress to a stable interface alloy phase that develops fully for annealing at 500-600°C. A possible reason for the alloy phase is discussed to be an elastic interaction from the Si(001) surface.

Original languageEnglish
Pages (from-to)L533-L539
JournalSurface Science
Volume381
Issue number1
DOIs
Publication statusPublished - 1997 Jun 1

Keywords

  • Auger electron diffraction
  • Germanium
  • Growth
  • Low energy electron diffraction (LEED)
  • Low index single crystal surfaces
  • Silicon
  • Single crystal epitaxy
  • X-ray photoelectron spectroscopy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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