Existence of a stable intermixing phase for monolayer Ge on Si(001)

H. W. Yeom; M. Sasaki; S. Suzuki; S. Sato; S. Hosoi; M. Iwabuchi; K. Higashiyama; H. Fukutani; M. Nakamura; T. Abukawa; S. Kono

doi:10.1016/S0039-6028(97)00047-2

Existence of a stable intermixing phase for monolayer Ge on Si(001)

H. W. Yeom, M. Sasaki, S. Suzuki, S. Sato, S. Hosoi, M. Iwabuchi, K. Higashiyama, H. Fukutani, M. Nakamura, T. Abukawa, S. Kono

SR Core Research Division

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Abstract

A monolayer adsorption of Ge on a single-domain Si(001)2 × 1 surface has been investigated by X-ray excited Auger electron diffraction (AED) and scanning tunneling microscopy. Contrary to the common belief, a significant intermixing of Ge down to at least the fourth layer is identified. This intermixing is found to progress to a stable interface alloy phase that develops fully for annealing at 500-600°C. A possible reason for the alloy phase is discussed to be an elastic interaction from the Si(001) surface.

Original language	English
Pages (from-to)	L533-L539
Journal	Surface Science
Volume	381
Issue number	1
DOIs	https://doi.org/10.1016/S0039-6028(97)00047-2
Publication status	Published - 1997 Jun 1

Keywords

Auger electron diffraction
Germanium
Growth
Low energy electron diffraction (LEED)
Low index single crystal surfaces
Silicon
Single crystal epitaxy
X-ray photoelectron spectroscopy

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/S0039-6028(97)00047-2

Cite this

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abstract = "A monolayer adsorption of Ge on a single-domain Si(001)2 × 1 surface has been investigated by X-ray excited Auger electron diffraction (AED) and scanning tunneling microscopy. Contrary to the common belief, a significant intermixing of Ge down to at least the fourth layer is identified. This intermixing is found to progress to a stable interface alloy phase that develops fully for annealing at 500-600°C. A possible reason for the alloy phase is discussed to be an elastic interaction from the Si(001) surface.",

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T1 - Existence of a stable intermixing phase for monolayer Ge on Si(001)

AU - Yeom, H. W.

AU - Sasaki, M.

AU - Suzuki, S.

AU - Sato, S.

AU - Hosoi, S.

AU - Iwabuchi, M.

AU - Higashiyama, K.

AU - Fukutani, H.

AU - Nakamura, M.

AU - Abukawa, T.

AU - Kono, S.

PY - 1997/6/1

Y1 - 1997/6/1

N2 - A monolayer adsorption of Ge on a single-domain Si(001)2 × 1 surface has been investigated by X-ray excited Auger electron diffraction (AED) and scanning tunneling microscopy. Contrary to the common belief, a significant intermixing of Ge down to at least the fourth layer is identified. This intermixing is found to progress to a stable interface alloy phase that develops fully for annealing at 500-600°C. A possible reason for the alloy phase is discussed to be an elastic interaction from the Si(001) surface.

AB - A monolayer adsorption of Ge on a single-domain Si(001)2 × 1 surface has been investigated by X-ray excited Auger electron diffraction (AED) and scanning tunneling microscopy. Contrary to the common belief, a significant intermixing of Ge down to at least the fourth layer is identified. This intermixing is found to progress to a stable interface alloy phase that develops fully for annealing at 500-600°C. A possible reason for the alloy phase is discussed to be an elastic interaction from the Si(001) surface.

KW - Auger electron diffraction

KW - Germanium

KW - Growth

KW - Low energy electron diffraction (LEED)

KW - Low index single crystal surfaces

KW - Silicon

KW - Single crystal epitaxy

KW - X-ray photoelectron spectroscopy

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UR - http://www.scopus.com/inward/citedby.url?scp=0031162836&partnerID=8YFLogxK

U2 - 10.1016/S0039-6028(97)00047-2

DO - 10.1016/S0039-6028(97)00047-2

M3 - Article

AN - SCOPUS:0031162836

VL - 381

SP - L533-L539

JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - 1

ER -

Existence of a stable intermixing phase for monolayer Ge on Si(001)

Abstract

Keywords

ASJC Scopus subject areas

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