Abstract
A monolayer adsorption of Ge on a single-domain Si(001)2 × 1 surface has been investigated by X-ray excited Auger electron diffraction (AED) and scanning tunneling microscopy. Contrary to the common belief, a significant intermixing of Ge down to at least the fourth layer is identified. This intermixing is found to progress to a stable interface alloy phase that develops fully for annealing at 500-600°C. A possible reason for the alloy phase is discussed to be an elastic interaction from the Si(001) surface.
Original language | English |
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Pages (from-to) | L533-L539 |
Journal | Surface Science |
Volume | 381 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1997 Jun 1 |
Keywords
- Auger electron diffraction
- Germanium
- Growth
- Low energy electron diffraction (LEED)
- Low index single crystal surfaces
- Silicon
- Single crystal epitaxy
- X-ray photoelectron spectroscopy
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry