Excitonic Rabi oscillations in semiconductor quantum dot observed by photon echo spectroscopy

K. Asakura, Y. Mitsumori, Hideo Kosaka, K. Edamatsu, K. Akahane, N. Yamamoto, M. Sasaki, N. Ohtani

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Optical properties in single-layer InGaAlAs/GaAlAs semiconductor quantum dots were studied by two-pulse photon echo technique. From the decay time, the optical coherence time of the excitons was estimated to be 2.5 ns, which is independent of the excitation intensity. We also observed the excitonic Rabi oscillations by measuring the photon echo intensity as a function of the excitation pulse area. The observed oscillatory structure is not expected from two-level systems.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Pages529-530
Number of pages2
DOIs
Publication statusPublished - 2011 Dec 1
Event30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
Duration: 2010 Jul 252010 Jul 30

Publication series

NameAIP Conference Proceedings
Volume1399
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other30th International Conference on the Physics of Semiconductors, ICPS-30
CountryKorea, Republic of
CitySeoul
Period10/7/2510/7/30

Keywords

  • Rabi oscillations
  • exciton
  • photon echo
  • quantum dot

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Asakura, K., Mitsumori, Y., Kosaka, H., Edamatsu, K., Akahane, K., Yamamoto, N., Sasaki, M., & Ohtani, N. (2011). Excitonic Rabi oscillations in semiconductor quantum dot observed by photon echo spectroscopy. In Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30 (pp. 529-530). (AIP Conference Proceedings; Vol. 1399). https://doi.org/10.1063/1.3666487