Excitonic photoluminescence in a CuAlSe2 chalcopyrite semiconductor grown by low-pressure metalorganic chemical-vapor deposition

Shigefusa Chichibu, Satoru Matsumoto, Sho Shirakata, Shigehiro Isomura, Hirofumi Higuchi

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

Excitonic photoluminescence (PL) in a CuAlSe2 chalcopyrite semiconductor was observed. High-quality CuAlSe2 epilayers were grown by the low-pressure metalorganic chemical-vapor deposition technique. Based on photoreflectance measurements, the PL peak at 2.739 eV was assigned to a free exciton emission. The PL peak at 2.677 eV was tentatively assigned to a bound exciton emission.

Original languageEnglish
Pages (from-to)6446-6447
Number of pages2
JournalJournal of Applied Physics
Volume74
Issue number10
DOIs
Publication statusPublished - 1993 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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