Excitonic emission dynamics in homoepitaxial AlN films studied using polarized and spatio-time-resolved cathodoluminescence measurements

S. F. Chichibu, K. Hazu, Y. Ishikawa, M. Tashiro, T. Ohtomo, K. Furusawa, A. Uedono, S. Mita, J. Xie, R. Collazo, Z. Sitar

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22 Citations (Scopus)

Abstract

Excitonic emission dynamics in homoepitaxial AlN films grown on a freestanding substrate prepared by the physical-vapor-transport method were examined. Reflecting the low threading dislocation density ( 10 4cm - 2), room-temperature cathodoluminescence intensity images mapped at the free A-exciton energy exhibited homogeneous contrasts. Low-temperature cathodoluminescence peaks at 6.0415 and 6.0287 eV, which were polarized parallel and perpendicular, respectively, to the c-axis, exhibited identical risetimes and short lifetimes; the latter coincided with the temporal delay of neutral donor-bound exciton emissions. These results support the assumption that the two peaks originate from the recombination of free A-excitons of irreducible representations Γ 1 and Γ 5, respectively.

Original languageEnglish
Article number142103
JournalApplied Physics Letters
Volume103
Issue number14
DOIs
Publication statusPublished - 2013 Sep 30

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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