Exciton recombination process in GaAs/AlAs type-II heterostructures in pulsed high magnetic fields and a uniaxial pressure

K. Ono; K. Uchida; N. Miura; Y. Hirayama; K. Ohdaira; Y. Shiraki

doi:10.1016/j.physe.2003.11.104

Exciton recombination process in GaAs/AlAs type-II heterostructures in pulsed high magnetic fields and a uniaxial pressure

K. Ono, K. Uchida, N. Miura, Y. Hirayama, K. Ohdaira, Y. Shiraki

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

We measured magneto-photoluminescence (PL) spectra in type-II heterostructures of GaAs/AlAs in high magnetic fields up to 40 T under a uniaxial pressure. We observed a remarkable decrease of the integrated magneto-PL intensity with increasing magnetic field at 4.2 K. With increasing temperature or excitation laser power, however, the field-induced decrease of the integrated PL intensity became lesser amount. The experimental observation strongly suggests that electrons and holes are localized in minima of the fluctuating potential due to the interface roughness. We can infer that this is a general feature of the indirect excitons which comprise spatially separated electrons and holes.

Original language	English
Pages (from-to)	698-702
Number of pages	5
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	21
Issue number	2-4
DOIs	https://doi.org/10.1016/j.physe.2003.11.104
Publication status	Published - 2004 Mar 1
Externally published	Yes
Event	Proceedings of the Eleventh International Conference on Modulation (MSS11) - Nara, Japan Duration: 2003 Jul 14 → 2003 Jul 18

Keywords

Exciton
GaAs
Heterostructure
Indirect transition
Magnetic field

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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Exciton recombination process in GaAs/AlAs type-II heterostructures in pulsed high magnetic fields and a uniaxial pressure. / Ono, K.; Uchida, K.; Miura, N.; Hirayama, Y.; Ohdaira, K.; Shiraki, Y.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 21, No. 2-4, 01.03.2004, p. 698-702.

Research output: Contribution to journal › Conference article › peer-review

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title = "Exciton recombination process in GaAs/AlAs type-II heterostructures in pulsed high magnetic fields and a uniaxial pressure",

abstract = "We measured magneto-photoluminescence (PL) spectra in type-II heterostructures of GaAs/AlAs in high magnetic fields up to 40 T under a uniaxial pressure. We observed a remarkable decrease of the integrated magneto-PL intensity with increasing magnetic field at 4.2 K. With increasing temperature or excitation laser power, however, the field-induced decrease of the integrated PL intensity became lesser amount. The experimental observation strongly suggests that electrons and holes are localized in minima of the fluctuating potential due to the interface roughness. We can infer that this is a general feature of the indirect excitons which comprise spatially separated electrons and holes.",

keywords = "Exciton, GaAs, Heterostructure, Indirect transition, Magnetic field",

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TY - JOUR

T1 - Exciton recombination process in GaAs/AlAs type-II heterostructures in pulsed high magnetic fields and a uniaxial pressure

AU - Ono, K.

AU - Uchida, K.

AU - Miura, N.

AU - Hirayama, Y.

AU - Ohdaira, K.

AU - Shiraki, Y.

PY - 2004/3/1

Y1 - 2004/3/1

N2 - We measured magneto-photoluminescence (PL) spectra in type-II heterostructures of GaAs/AlAs in high magnetic fields up to 40 T under a uniaxial pressure. We observed a remarkable decrease of the integrated magneto-PL intensity with increasing magnetic field at 4.2 K. With increasing temperature or excitation laser power, however, the field-induced decrease of the integrated PL intensity became lesser amount. The experimental observation strongly suggests that electrons and holes are localized in minima of the fluctuating potential due to the interface roughness. We can infer that this is a general feature of the indirect excitons which comprise spatially separated electrons and holes.

AB - We measured magneto-photoluminescence (PL) spectra in type-II heterostructures of GaAs/AlAs in high magnetic fields up to 40 T under a uniaxial pressure. We observed a remarkable decrease of the integrated magneto-PL intensity with increasing magnetic field at 4.2 K. With increasing temperature or excitation laser power, however, the field-induced decrease of the integrated PL intensity became lesser amount. The experimental observation strongly suggests that electrons and holes are localized in minima of the fluctuating potential due to the interface roughness. We can infer that this is a general feature of the indirect excitons which comprise spatially separated electrons and holes.

KW - Exciton

KW - GaAs

KW - Heterostructure

KW - Indirect transition

KW - Magnetic field

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DO - 10.1016/j.physe.2003.11.104

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JO - Physica E: Low-Dimensional Systems and Nanostructures

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