Exciton recombination process in GaAs/AlAs type-II heterostructures in pulsed high magnetic fields and a uniaxial pressure

K. Ono, K. Uchida, N. Miura, Y. Hirayama, K. Ohdaira, Y. Shiraki

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

We measured magneto-photoluminescence (PL) spectra in type-II heterostructures of GaAs/AlAs in high magnetic fields up to 40 T under a uniaxial pressure. We observed a remarkable decrease of the integrated magneto-PL intensity with increasing magnetic field at 4.2 K. With increasing temperature or excitation laser power, however, the field-induced decrease of the integrated PL intensity became lesser amount. The experimental observation strongly suggests that electrons and holes are localized in minima of the fluctuating potential due to the interface roughness. We can infer that this is a general feature of the indirect excitons which comprise spatially separated electrons and holes.

Original languageEnglish
Pages (from-to)698-702
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume21
Issue number2-4
DOIs
Publication statusPublished - 2004 Mar 1
Externally publishedYes
EventProceedings of the Eleventh International Conference on Modulation (MSS11) - Nara, Japan
Duration: 2003 Jul 142003 Jul 18

Keywords

  • Exciton
  • GaAs
  • Heterostructure
  • Indirect transition
  • Magnetic field

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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