Exciton binding energies in chalcopyrite semiconductors

Bernard Gil, Didier Felbacq, Shigefusa F. Chichibu

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The optical spectra of Cu-III-VI 2 chalcopyrite compounds display rich excitonic features in the fundamental direct bandgap energy region. The energy structure of excited excitonic states reported in the literature are reexamined using a calculation of the eigenstates of the hydrogenic problem in the context of the anisotropic band structure and the anisotropy of the dielectric constant. We find some remarkable agreements as well as inconsistencies in the literature that we attribute to the following reasons: (i) the difficulty to interpret fine structure-splitting data in noncubic semiconductors, and (ii) the more severe difficulty growing these materials with high enough quality. We finally propose some values that match very well with recent proposals and integrate the trend between Rydberg energies and bandgap values for the binary inorganic zincblende and wurtzite semiconductors.

Original languageEnglish
Article number075205
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume85
Issue number7
DOIs
Publication statusPublished - 2012 Feb 8

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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