Excitation power dependent photoluminescence of In0.7Ga 0.3As1-xNx quantum dots grown on GaAs (0 0 1)

A. Nishikawa, R. Katayama, K. Onabe, Y. G. Hong, C. W. Tu

Research output: Contribution to journalConference articlepeer-review

6 Citations (Scopus)

Abstract

The excitation power dependent photoluminescence (PL) of self-assembled In0.7Ga0.3As1-xNx (x=0,0.02) quantum dots (QDs) has been investigated in the excitation power density ranged from 3.0 kW/cm2 to 50 mW/cm2. As the excitation power increases, the emission peak of In0.7Ga 0.3As0.98N0.02 QDs shifts to shorter wavelengths, while the peak of In0.7Ga0.3As QDs remains at the same wavelength. In the low-excitation cases, the PL peak of the In 0.7Ga0.3As0.98N0.02 QDs has a tail on the lower energy side, on the other hand, that of the In0.7Ga 0.3As QDs shows a symmetrical shape. Since the dot size distribution of the In0.7Ga0.3As0.98N0.02 QDs is similar to that of the In0.7Ga0.3As QDs, this blue-shift and the lower energy tail of the PL peak of the In0.7Ga 0.3As0.98N0.02 QDs are attributed to the nitrogen-related states below the conduction band edge as are observed in the case of InGaAsN quantum wells (QWs).

Original languageEnglish
Pages (from-to)244-248
Number of pages5
JournalJournal of Crystal Growth
Volume278
Issue number1-4
DOIs
Publication statusPublished - 2005 May 1
Event13th International Conference on Molecular Beam Epitaxy -
Duration: 2004 Aug 222004 Aug 27

Keywords

  • A1. Low-dimensional structures
  • A3. Molecular beam eitaxy
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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