Excitation power dependent photoluminescence of In0.7Ga 0.3As1-xNx quantum dots grown on GaAs (0 0 1)

A. Nishikawa; R. Katayama; K. Onabe; Y. G. Hong; C. W. Tu

doi:10.1016/j.jcrysgro.2004.12.067

Excitation power dependent photoluminescence of In_0.7Ga _0.3As_1-xN_x quantum dots grown on GaAs (0 0 1)

A. Nishikawa, R. Katayama, K. Onabe, Y. G. Hong, C. W. Tu

Materials Design Division

Research output: Contribution to journal › Conference article › peer-review

6 Citations (Scopus)

Abstract

The excitation power dependent photoluminescence (PL) of self-assembled In_0.7Ga_0.3As_1-xN_x (x=0,0.02) quantum dots (QDs) has been investigated in the excitation power density ranged from 3.0 kW/cm² to 50 mW/cm². As the excitation power increases, the emission peak of In_0.7Ga _0.3As_0.98N_0.02 QDs shifts to shorter wavelengths, while the peak of In_0.7Ga_0.3As QDs remains at the same wavelength. In the low-excitation cases, the PL peak of the In _0.7Ga_0.3As_0.98N_0.02 QDs has a tail on the lower energy side, on the other hand, that of the In_0.7Ga _0.3As QDs shows a symmetrical shape. Since the dot size distribution of the In_0.7Ga_0.3As_0.98N_0.02 QDs is similar to that of the In_0.7Ga_0.3As QDs, this blue-shift and the lower energy tail of the PL peak of the In_0.7Ga _0.3As_0.98N_0.02 QDs are attributed to the nitrogen-related states below the conduction band edge as are observed in the case of InGaAsN quantum wells (QWs).

Original language	English
Pages (from-to)	244-248
Number of pages	5
Journal	Journal of Crystal Growth
Volume	278
Issue number	1-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.12.067
Publication status	Published - 2005 May 1
Event	13th International Conference on Molecular Beam Epitaxy - Duration: 2004 Aug 22 → 2004 Aug 27

Keywords

A1. Low-dimensional structures
A3. Molecular beam eitaxy
B2. Semiconducting III-V materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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@article{1ed5264648034090b96d131db7a84bad,

title = "Excitation power dependent photoluminescence of In0.7Ga 0.3As1-xNx quantum dots grown on GaAs (0 0 1)",

abstract = "The excitation power dependent photoluminescence (PL) of self-assembled In0.7Ga0.3As1-xNx (x=0,0.02) quantum dots (QDs) has been investigated in the excitation power density ranged from 3.0 kW/cm2 to 50 mW/cm2. As the excitation power increases, the emission peak of In0.7Ga 0.3As0.98N0.02 QDs shifts to shorter wavelengths, while the peak of In0.7Ga0.3As QDs remains at the same wavelength. In the low-excitation cases, the PL peak of the In 0.7Ga0.3As0.98N0.02 QDs has a tail on the lower energy side, on the other hand, that of the In0.7Ga 0.3As QDs shows a symmetrical shape. Since the dot size distribution of the In0.7Ga0.3As0.98N0.02 QDs is similar to that of the In0.7Ga0.3As QDs, this blue-shift and the lower energy tail of the PL peak of the In0.7Ga 0.3As0.98N0.02 QDs are attributed to the nitrogen-related states below the conduction band edge as are observed in the case of InGaAsN quantum wells (QWs).",

keywords = "A1. Low-dimensional structures, A3. Molecular beam eitaxy, B2. Semiconducting III-V materials",

author = "A. Nishikawa and R. Katayama and K. Onabe and Hong, {Y. G.} and Tu, {C. W.}",

year = "2005",

month = may,

day = "1",

doi = "10.1016/j.jcrysgro.2004.12.067",

language = "English",

volume = "278",

pages = "244--248",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-4",

note = "13th International Conference on Molecular Beam Epitaxy ; Conference date: 22-08-2004 Through 27-08-2004",

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TY - JOUR

T1 - Excitation power dependent photoluminescence of In0.7Ga 0.3As1-xNx quantum dots grown on GaAs (0 0 1)

AU - Nishikawa, A.

AU - Katayama, R.

AU - Onabe, K.

AU - Hong, Y. G.

AU - Tu, C. W.

PY - 2005/5/1

Y1 - 2005/5/1

N2 - The excitation power dependent photoluminescence (PL) of self-assembled In0.7Ga0.3As1-xNx (x=0,0.02) quantum dots (QDs) has been investigated in the excitation power density ranged from 3.0 kW/cm2 to 50 mW/cm2. As the excitation power increases, the emission peak of In0.7Ga 0.3As0.98N0.02 QDs shifts to shorter wavelengths, while the peak of In0.7Ga0.3As QDs remains at the same wavelength. In the low-excitation cases, the PL peak of the In 0.7Ga0.3As0.98N0.02 QDs has a tail on the lower energy side, on the other hand, that of the In0.7Ga 0.3As QDs shows a symmetrical shape. Since the dot size distribution of the In0.7Ga0.3As0.98N0.02 QDs is similar to that of the In0.7Ga0.3As QDs, this blue-shift and the lower energy tail of the PL peak of the In0.7Ga 0.3As0.98N0.02 QDs are attributed to the nitrogen-related states below the conduction band edge as are observed in the case of InGaAsN quantum wells (QWs).

AB - The excitation power dependent photoluminescence (PL) of self-assembled In0.7Ga0.3As1-xNx (x=0,0.02) quantum dots (QDs) has been investigated in the excitation power density ranged from 3.0 kW/cm2 to 50 mW/cm2. As the excitation power increases, the emission peak of In0.7Ga 0.3As0.98N0.02 QDs shifts to shorter wavelengths, while the peak of In0.7Ga0.3As QDs remains at the same wavelength. In the low-excitation cases, the PL peak of the In 0.7Ga0.3As0.98N0.02 QDs has a tail on the lower energy side, on the other hand, that of the In0.7Ga 0.3As QDs shows a symmetrical shape. Since the dot size distribution of the In0.7Ga0.3As0.98N0.02 QDs is similar to that of the In0.7Ga0.3As QDs, this blue-shift and the lower energy tail of the PL peak of the In0.7Ga 0.3As0.98N0.02 QDs are attributed to the nitrogen-related states below the conduction band edge as are observed in the case of InGaAsN quantum wells (QWs).

KW - A1. Low-dimensional structures

KW - A3. Molecular beam eitaxy

KW - B2. Semiconducting III-V materials

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DO - 10.1016/j.jcrysgro.2004.12.067

M3 - Conference article

AN - SCOPUS:18444389506

VL - 278

SP - 244

EP - 248

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-4

T2 - 13th International Conference on Molecular Beam Epitaxy

Y2 - 22 August 2004 through 27 August 2004

ER -