Abstract
The excitation power dependent photoluminescence (PL) of self-assembled In0.7Ga0.3As1-xNx (x=0,0.02) quantum dots (QDs) has been investigated in the excitation power density ranged from 3.0 kW/cm2 to 50 mW/cm2. As the excitation power increases, the emission peak of In0.7Ga 0.3As0.98N0.02 QDs shifts to shorter wavelengths, while the peak of In0.7Ga0.3As QDs remains at the same wavelength. In the low-excitation cases, the PL peak of the In 0.7Ga0.3As0.98N0.02 QDs has a tail on the lower energy side, on the other hand, that of the In0.7Ga 0.3As QDs shows a symmetrical shape. Since the dot size distribution of the In0.7Ga0.3As0.98N0.02 QDs is similar to that of the In0.7Ga0.3As QDs, this blue-shift and the lower energy tail of the PL peak of the In0.7Ga 0.3As0.98N0.02 QDs are attributed to the nitrogen-related states below the conduction band edge as are observed in the case of InGaAsN quantum wells (QWs).
Original language | English |
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Pages (from-to) | 244-248 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 278 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - 2005 May 1 |
Event | 13th International Conference on Molecular Beam Epitaxy - Duration: 2004 Aug 22 → 2004 Aug 27 |
Keywords
- A1. Low-dimensional structures
- A3. Molecular beam eitaxy
- B2. Semiconducting III-V materials
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry