TY - JOUR
T1 - Excitation-photon-energy selectivity of photoconversions in halogen-bridged Pd-chain compounds
T2 - Mott insulator to metal or charge-density-wave state
AU - Matsuzaki, H.
AU - Iwata, M.
AU - Miyamoto, T.
AU - Terashige, T.
AU - Iwano, K.
AU - Takaishi, S.
AU - Takamura, M.
AU - Kumagai, S.
AU - Yamashita, Masahiro
AU - Takahashi, R.
AU - Wakabayashi, Y.
AU - Okamoto, H.
PY - 2014/8/28
Y1 - 2014/8/28
N2 - Ultrafast photoinduced transitions of a one-dimensional Mott insulator into two distinct electronic phases, metal and charge-density-wave (CDW) state, were achieved in a bromine-bridged Pd-chain compound [Pd(en)2Br](C5-Y)2H2O (en=ethylenediamine and C5-Y=dialkylsulfosuccinate), by selecting the photon energy of a femtosecond excitation pulse. For the resonant excitation of the Mott-gap transition, excitonic states are generated and converted to one-dimensional CDW domains. For the higher-energy excitation, free electron and hole carriers are produced, giving rise to a transition of the Mott insulator to a metal. Such selectivity in photoconversions by the choice of initial photoexcited states opens a new possibility for the developments of advanced optical switching and memory functions.
AB - Ultrafast photoinduced transitions of a one-dimensional Mott insulator into two distinct electronic phases, metal and charge-density-wave (CDW) state, were achieved in a bromine-bridged Pd-chain compound [Pd(en)2Br](C5-Y)2H2O (en=ethylenediamine and C5-Y=dialkylsulfosuccinate), by selecting the photon energy of a femtosecond excitation pulse. For the resonant excitation of the Mott-gap transition, excitonic states are generated and converted to one-dimensional CDW domains. For the higher-energy excitation, free electron and hole carriers are produced, giving rise to a transition of the Mott insulator to a metal. Such selectivity in photoconversions by the choice of initial photoexcited states opens a new possibility for the developments of advanced optical switching and memory functions.
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U2 - 10.1103/PhysRevLett.113.096403
DO - 10.1103/PhysRevLett.113.096403
M3 - Article
AN - SCOPUS:84907378467
VL - 113
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 9
M1 - 096403
ER -