Excitation photocapacitance study of ionized levels in n-type GaAs observed during photoquenching

Jun Ichi Nishizawa, Yutaka Oyama

Research output: Contribution to journalArticlepeer-review

Abstract

The excitation photocapacitance method is applied under a constant capacitance condition to study Te-doped GaAs bulk crystals, prepared by annealing at 900°C for 67 h under extremely high arsenic vapor pressure (4817 Torr). Photocapacitance measurements after monochromatic light irradiation reveal two deep levels at 0.50 and 0.68 eV above the valence band only during photoquenching. By varying the primary excitation photon energy, the emission and the capture photon energies are strictly determined depending on the change of the charge states of the excess arsenic atom-related levels.

Original languageEnglish
Pages (from-to)2892-2894
Number of pages3
JournalJournal of the Electrochemical Society
Volume145
Issue number8
DOIs
Publication statusPublished - 1998 Aug

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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