Abstract
The excitation photocapacitance method was applied to n-GaAs:Te (n=4 × 1016 cm-3) prepared by annealing under various excess arsenic vapor pressures. By changing the primary excitation photon energies, the emission spectra for the EL20→EL2+ and EL2+→EL2++ transitions were determined. Considering the electron capture processes of the valence band (VB)→EL2+ (0.67 eV) and VB→EL2++ (0.47 eV) at 77 K, the Frank-Condon shifts (dFC) of the annealed GaAs crystals were determined for the EL2+ level on the basis of the configuration coordinate model. It was shown that the lattice relaxation around the EL2 level is larger under arsenic-poor conditions, and thus it is considered that arsenic vacancies are closely related with the atomic configuration of the EL2 defect, in combination with excess arsenic defects.
Original language | English |
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Article number | 033705 |
Journal | Journal of Applied Physics |
Volume | 97 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2005 Feb 1 |
ASJC Scopus subject areas
- Physics and Astronomy(all)