Excitation photocapacitance study of EL2 in n-GaAs and its relation to non-stoichiometry

Yutaka Oyama, Jun Ichi Nishizawa

Research output: Contribution to journalArticlepeer-review

Abstract

The excitation photocapacitance measurements are performed on n-GaAs to obtain charge transition characteristics of EL2 defects in a full spectral region. It is shown that the threshold photon energy for EL2++ to EL2+ transition is changed as a function of the primary excitation photon energy. It is also shown that the Frank-Condon shifts (dFC) changed. It is considered that the lattice relaxation around the EL2 defect is affected by the deviation from the stoichiometric composition.

Original languageEnglish
Pages (from-to)297-301
Number of pages5
JournalMaterials Science in Semiconductor Processing
Volume6
Issue number5-6
DOIs
Publication statusPublished - 2003 Oct 1

Keywords

  • Deep levels
  • GaAs,EL2
  • Non-stoichiometry
  • Photocapacitance

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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