We report on measurement of the electron-hole effective g-factors (geff*) depending on electron filling factors ν from magnetophotoluminescence spectroscopy at low magnetic fields B<1 T in low electron density regime in a GaAs/Al0.33Ga0.67As-gated quantum well. Enhancement of geff* at odd ν is observed. The oscillatory behavior of geff* is compared with results of a theory that takes into account the lowest-order exchange interaction of the screened Coulomb interaction. Good agreement of the observed geff* with theoretical results is obtained except ν at around 3. The enhancement of geff* at even ν with decrease in electron density has not been observed.
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 2013 Feb 25|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics