Exchange bias effects in Heusler alloy Ni2MnAl/Fe bilayers

Tomoki Tsuchiya, Takahide Kubota, Tomoko Sugiyama, Teodor Huminiuc, Atsufumi Hirohata, Koki Takanashi

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Ni2MnAl Heusler alloy thin films were epitaxially grown on MgO(1 0 0) single crystal substrates by ultra-high-vacuum magnetron sputtering technique. X-ray diffraction and transmission electron microscopy observation revealed that the structures of all the Ni2MnAl thin films were B2-ordered regardless of the deposition temperature ranging from room temperature to 600 °C. The temperature dependence of electrical resistivity showed a kink about 280 K, which was consistent with a reported value of the Néel temperature for antiferromagnetic B2-Ni2MnAl. The magnetization curves of Ni2MnAl/Fe bilayer samples showed a shift caused by the interfacial exchange interaction at 10 K. The maximum value of the exchange bias field H ex was 55 Oe corresponding to the exchange coupling energy J k of 0.03 erg cm-2.

Original languageEnglish
Article number235001
JournalJournal of Physics D: Applied Physics
Volume49
Issue number23
DOIs
Publication statusPublished - 2016 May 12

Keywords

  • Heusler alloys
  • antiferromagnetic material
  • exchange bias
  • thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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