Excess ion density at the GaP/GaP liquid-phase epitaxial regrowth interface

Takao Saito, Yutaka Oyama, Ken Suto, Jun Ichi Nishizawa, Kimura Tomoyuki Kimura

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Imperfections at the regrowth interface in GaP liquid-phase epitaxial growth using the temperature difference method under controlled vapor pressure are investigated by changing the surface treatment and growth conditions. High excess ion density at the interface is observed by the capacitance-voltage (C-V) measurements, while excesses of oxygen, silicon and iron atoms at the interface are observed using the secondary ion mass spectrometry (SIMS). It is possible to decrease the high excess ion density by using a HCl/H2O etching solution and also by controlling the growth rate. Phosphorus vapor pressure treatment reduces the excess of oxygen atoms, but increases the excess of silicon atoms at the interface.

Original languageEnglish
Pages (from-to)666-674
Number of pages9
JournalJournal of Crystal Growth
Issue number4
Publication statusPublished - 2000 Feb 2

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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