TY - JOUR
T1 - Excess ion density at the GaP/GaP liquid-phase epitaxial regrowth interface
AU - Saito, Takao
AU - Oyama, Yutaka
AU - Suto, Ken
AU - Nishizawa, Jun Ichi
AU - Tomoyuki Kimura, Kimura
PY - 2000/2/2
Y1 - 2000/2/2
N2 - Imperfections at the regrowth interface in GaP liquid-phase epitaxial growth using the temperature difference method under controlled vapor pressure are investigated by changing the surface treatment and growth conditions. High excess ion density at the interface is observed by the capacitance-voltage (C-V) measurements, while excesses of oxygen, silicon and iron atoms at the interface are observed using the secondary ion mass spectrometry (SIMS). It is possible to decrease the high excess ion density by using a HCl/H2O etching solution and also by controlling the growth rate. Phosphorus vapor pressure treatment reduces the excess of oxygen atoms, but increases the excess of silicon atoms at the interface.
AB - Imperfections at the regrowth interface in GaP liquid-phase epitaxial growth using the temperature difference method under controlled vapor pressure are investigated by changing the surface treatment and growth conditions. High excess ion density at the interface is observed by the capacitance-voltage (C-V) measurements, while excesses of oxygen, silicon and iron atoms at the interface are observed using the secondary ion mass spectrometry (SIMS). It is possible to decrease the high excess ion density by using a HCl/H2O etching solution and also by controlling the growth rate. Phosphorus vapor pressure treatment reduces the excess of oxygen atoms, but increases the excess of silicon atoms at the interface.
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U2 - 10.1016/S0022-0248(99)00612-0
DO - 10.1016/S0022-0248(99)00612-0
M3 - Article
AN - SCOPUS:0033896067
VL - 209
SP - 666
EP - 674
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 4
ER -