Excess currents induced by hot hole injection and FN electron injection in thin SiO2 films

Akinobu Teramoto, Kiyoteru Kobayashi, Yoshikazu Ohno, Akira Shigetomi

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

The behavior of excess currents induced by Fowler-Nordheim electron injection stress (FN electron injection) has been investigated for 6.0-nm oxides. Excess currents are induced by FN electron injection in 6.0-nm oxides together with positive charges being induced in it. To clarify the role of hole injection in FN electron injection, the behavior of excess currents induced by substrate hot hole injection has also been investigated in 6.0-nm oxides. The leakage behavior after hot hole injection is the same as FN electron injection. The excess currents induced both by the FN electron injection and by the substrate hot hole injection are due to trap-assisted tunneling and field enhancement at the cathode due to the positive trapped charge. The charge centroid of the positive charges induced by both stresses are located 3.0 nm from the Si/SiO2 interface which is at the center of 6.0-nm oxide. The excess currents induced by hot hole injection and FN electron injection are caused by traps in SiO2 films produced by injected holes from the anode.

Original languageEnglish
Pages (from-to)868-873
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume48
Issue number5
DOIs
Publication statusPublished - 2001 May
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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