Excess currents induced by hot-hole injection and F-N stress in thin SiO2 films

Akinobu Teramoto, Kiyoteru Kobayashi, Yasuji Matsui, Makoto Hirayama, Akihiko Yasuoka

Research output: Contribution to journalConference article

24 Citations (Scopus)

Abstract

The behavior of excess currents induced by hot-hole injection and F-N stress is investigated in 60-angstroms oxides. The excess currents induced by the hot-hole injection and F-N stress are due to the filling of trap centers with electrons in addition to a leakage current through the oxides, and they decrease by annealing at 250 °C. The excess current induced by F-N stress is caused by the injected holes produced by high-energy-electrons. Dielectric breakdown caused by hot-hole injection has also been studied, and it is revealed that the total positive charge to breakdown (Qp) is independent of the oxide field. This supports previous measurement that the Qp value is constant during F-N stress. The annealing-recovery mechanism in the dielectric breakdown is different from that in the excess current, though both are caused by the hot-hole injection.

Original languageEnglish
Pages (from-to)113-116
Number of pages4
JournalAnnual Proceedings - Reliability Physics (Symposium)
Publication statusPublished - 1996 Jan 1
Externally publishedYes
EventProceedings of the 1996 34th Annual IEEE International Reliability Physics - Dallas, TX, USA
Duration: 1996 Apr 301996 May 2

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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    Teramoto, A., Kobayashi, K., Matsui, Y., Hirayama, M., & Yasuoka, A. (1996). Excess currents induced by hot-hole injection and F-N stress in thin SiO2 films. Annual Proceedings - Reliability Physics (Symposium), 113-116.