Excellent low loss performance of microwave permeability in high resistive CoFeHfO films by thermal annealing

Dong Young Kim, Seok Soo Yoon, B. Parvatheeswara Rao, Cheol Gi Kim, Ki Hyeon Kim, M. Takahashi

    Research output: Contribution to journalArticlepeer-review

    1 Citation (Scopus)

    Abstract

    This paper reports on the thermal field annealing effect of microwave permeabilities in CoFeHfO thin films. For the high resistive optimized Co 19 Fe53 Hf8 O20 thin films annealed at 150° C, apart from excellent magnetic performance very low Gilbert damping constants (α < 0.017) are obtained up to film thickness of 437 nm. The results are interpreted in terms of changes in microstructure leading to structural relaxation effect and evolution of nanocrystalline Co(Fe) precipitates out of thermal field annealing. These materials with excellent low loss performance are obviously the most promising candidates for microwave device applications.

    Original languageEnglish
    Pages (from-to)3115-3118
    Number of pages4
    JournalIEEE Transactions on Magnetics
    Volume44
    Issue number11
    DOIs
    Publication statusPublished - 2008 Nov 1

    Keywords

    • Amorphous
    • CoFeHfO
    • Low loss
    • Microwave permeability

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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