Excavation rate of silicon surface nanoholes

Yutaka Ohno, Seiji Takeda, Toshinari Ichihashi, Sumio Iijima

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Silicon surface nanoholes, that are small pits introduced spontaneously on electron exit surfaces of silicon foils under electron irradiation, are excavated at a constant rate with increasing electron dose. On the other hand, surface nanoholes on electron entrance surfaces become shallow under electron irradiation. The mechanism for the excavation and shallowing of surface nanoholes is discussed in terms of the movement of surface vacancies assisted by irradiating electrons.

Original languageEnglish
Article number126107
JournalJournal of Applied Physics
Volume99
Issue number12
DOIs
Publication statusPublished - 2006 Jul 11
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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