Silicon surface nanoholes, that are small pits introduced spontaneously on electron exit surfaces of silicon foils under electron irradiation, are excavated at a constant rate with increasing electron dose. On the other hand, surface nanoholes on electron entrance surfaces become shallow under electron irradiation. The mechanism for the excavation and shallowing of surface nanoholes is discussed in terms of the movement of surface vacancies assisted by irradiating electrons.
ASJC Scopus subject areas
- Physics and Astronomy(all)