Abstract
Evolution of stress-induced surface damage after annealing in various temperature over 200°C was observed. Deformation mechanisms of electroplated Cu thin films on TaN/SiO2/Si were investigated by performing isothermal annealing between 200°C and 400°C. During heating, fast relaxation and subsequent slow relaxation processes were observed. In contrast, during cooling, only slow relaxation process was observed. Stress relaxation behavior during isothermal annealing was analyzed in terms of power-law creep and diffusional creep. The large variation of exponent n in power-law creep means that those are not main mechanism. The both fast and slow relaxation curve fit well exponential decay function, which can indicate grain-boundary creep is the most plausible mechanism of stress-induced surface damages and stress-relaxation.
| Original language | English |
|---|---|
| Pages (from-to) | 3641-3646 |
| Number of pages | 6 |
| Journal | Materials Science Forum |
| Volume | 475-479 |
| Issue number | V |
| DOIs | |
| Publication status | Published - 2005 Jan 1 |
| Event | PRICM 5: The Fifth Pacific Rim International Conference on Advanced Materials and Processing - Beijing, China Duration: 2004 Nov 2 → 2004 Nov 5 |
Keywords
- Copper
- Diffusional creep
- Power-law creep
- Stress-induce surface damages
- Stress-relaxation
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering