Abstract
Single crystals of U(Ni1-xPdx)2Si2 with x = 0.05, 0.09 and 0.135 have been grown. Magnetization and electrical resistivity measurements were performed in a wide range of temperatures and magnetic fields in order to study stability of magnetic phases in the solid solutions between UNi2Si2 and UPd2Si2 with a special emphasis on the type of ground state. In UPd2Si2 the simple AFI-type antiferromagnetic structure of U moments is observed at low temperatures. UNi2Si2 adopts the uncompensated AF structure (UAF) with the + + - stacking of U moments along the c-axis and consequently this compound exhibits a spontaneous magnetization corresponding to 1/3 of the U moment. The substitution of Pd for Ni leads to a rapid decay of the spontaneous magnetization. The evolution of magnetization and electrical resistivity behavior with Pd doping is tentatively attributed to the coexistence of the AF-I and UAF phases in the ground state of U(Ni0.91Pd0.09)2Si2 and U(Ni0.865Pd0.135)2Si2. In this scenario, the volume fraction of the AF-I phase rapidly grows with Pd doping on account of the UAF. At lowest temperatures an irreversible transition to the UAF phase is observed when a sufficiently high magnetic field is applied along the c-axis.
Original language | English |
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Pages (from-to) | 313-318 |
Number of pages | 6 |
Journal | European Physical Journal B |
Volume | 30 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2002 Dec 1 |
Keywords
- 75.30 Gw Magnetic anisotropy
- 75.30 Kz Magnetic phase transitions
- 75.50 Ee Antiferromagnetic materials
- 75.50 Gg Ferrimagnetics
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics