Evolution of hydride components generated by hydrogen plasma irradiation of a si(110) surface investigated with in situ infrared absorption spectroscopy in multiple internal reflection geometry

Masanori Shinohara, Yoshiki Takami, Susumu Takabayashi, Akinori Oda, Yoshinobu Matsuda, Hiroshi Fujiyama

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The process of hydrogen plasma reacting with a Si(110) surface is investigated. The reaction process is measured with in situ infrared absorption spectroscopy (IRAS) in multiple internal reflection geometry. We monitor the evolution of hydride components in the Si(110) surface exposed to the hydrogen plasma. IRAS data show that the surface atomic arrangement of a Si(110) surface is distorted by plasma exposure. H is inserted into Si crystal and defects and vacancies are generated. Further, hydrogen plasma exposure creates silicon dihydride (SiH-2) components in an amorphous layer. The rm SiH2 formation rate is 0.5, by a comparison with the hydrogen plasma exposure time.

Original languageEnglish
Article number6529170
Pages (from-to)1878-1883
Number of pages6
JournalIEEE Transactions on Plasma Science
Volume41
Issue number8
DOIs
Publication statusPublished - 2013 Aug 26

Keywords

  • Amorphous
  • Si(110)
  • defect
  • hydrogen plasma
  • silicon hydride
  • vacancy

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Condensed Matter Physics

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