Evolution of electronic structure upon Cu doping in the topological insulator Bi2Se3

Y. Tanaka, K. Nakayama, S. Souma, T. Sato, N. Xu, P. Zhang, P. Richard, H. Ding, Y. Suzuki, P. Das, K. Kadowaki, T. Takahashi

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)

Abstract

We have performed angle-resolved photoemission spectroscopy of Cu xBi2Se3 as a function of Cu doping (x=0.0-0.25) to investigate the doping-induced evolution of the electronic structure. We found that the topological surface state is preserved even in the heavy-doping region (x = 0.25), indicative of the robustness of the surface state against doping and impurities. The estimated carrier concentration is far smaller than that expected from a simple intercalation picture, and saturates at x∼0.1 where superconductivity emerges. This indicates that the carrier concentration responsible for superconductivity is dominated by a subtle balance between two competing processes of electron and hole doping.

Original languageEnglish
Article number125111
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume85
Issue number12
DOIs
Publication statusPublished - 2012 Mar 12

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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