TY - JOUR
T1 - Evolution of Electronic States and Emergence of Superconductivity in the Polar Semiconductor GeTe by Doping Valence-Skipping Indium
AU - Kriener, M.
AU - Sakano, M.
AU - Kamitani, M.
AU - Bahramy, M. S.
AU - Yukawa, R.
AU - Horiba, K.
AU - Kumigashira, H.
AU - Ishizaka, K.
AU - Tokura, Y.
AU - Taguchi, Y.
N1 - Funding Information:
This work was partly supported by Grants-In-Aid for Scientific Research (S) from the Japan Society for the Promotion of Science (JSPS, No. 24224009), JST (No. JP16H00924), CREST JST (No. JPMJCR16F1), and PRESTO (No. JPMJPR15N5), Grant-In-Aid for Scientific Research (B) (JSPS, No. 17H02770), and Grant-In-Aid for Scientific Research (C) (JSPS, No. 15K05140). We thank R. Arita and T. Koretsune for fruitful discussions.
Publisher Copyright:
© 2020 American Physical Society.
PY - 2020/1/31
Y1 - 2020/1/31
N2 - GeTe is a chemically simple IV-VI semiconductor which bears a rich plethora of different physical properties induced by doping and external stimuli. Here, we report a superconductor-semiconductor-superconductor transition controlled by finely-tuned In doping. Our results reveal the existence of a critical doping concentration xc=0.12 in Ge1-xInxTe, where various properties, including structure, resistivity, charge carrier type, and the density of states, take either an extremum or change their character. At the same time, we find indications of a change in the In-valence state from In3+ to In1+ with increasing x by core-level photoemission spectroscopy, suggesting that this system is a new promising playground to probe valence fluctuations and their possible impact on structural, electronic, and thermodynamic properties of their host.
AB - GeTe is a chemically simple IV-VI semiconductor which bears a rich plethora of different physical properties induced by doping and external stimuli. Here, we report a superconductor-semiconductor-superconductor transition controlled by finely-tuned In doping. Our results reveal the existence of a critical doping concentration xc=0.12 in Ge1-xInxTe, where various properties, including structure, resistivity, charge carrier type, and the density of states, take either an extremum or change their character. At the same time, we find indications of a change in the In-valence state from In3+ to In1+ with increasing x by core-level photoemission spectroscopy, suggesting that this system is a new promising playground to probe valence fluctuations and their possible impact on structural, electronic, and thermodynamic properties of their host.
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U2 - 10.1103/PhysRevLett.124.047002
DO - 10.1103/PhysRevLett.124.047002
M3 - Article
C2 - 32058775
AN - SCOPUS:85079517422
VL - 124
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 4
M1 - 047002
ER -