Evolution of Electronic States and Emergence of Superconductivity in the Polar Semiconductor GeTe by Doping Valence-Skipping Indium

M. Kriener, M. Sakano, M. Kamitani, M. S. Bahramy, R. Yukawa, K. Horiba, H. Kumigashira, K. Ishizaka, Y. Tokura, Y. Taguchi

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

GeTe is a chemically simple IV-VI semiconductor which bears a rich plethora of different physical properties induced by doping and external stimuli. Here, we report a superconductor-semiconductor-superconductor transition controlled by finely-tuned In doping. Our results reveal the existence of a critical doping concentration xc=0.12 in Ge1-xInxTe, where various properties, including structure, resistivity, charge carrier type, and the density of states, take either an extremum or change their character. At the same time, we find indications of a change in the In-valence state from In3+ to In1+ with increasing x by core-level photoemission spectroscopy, suggesting that this system is a new promising playground to probe valence fluctuations and their possible impact on structural, electronic, and thermodynamic properties of their host.

Original languageEnglish
Article number047002
JournalPhysical review letters
Volume124
Issue number4
DOIs
Publication statusPublished - 2020 Jan 31

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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