Evidence of the presence of built-in strain in multicrystalline SiGe with large compositional distribution

Noritaka Usami, Tatsuya Takahashi, Kozo Fujiwara, Toru Ujihara, Gen Sazaki, Yoshihiro Murakami, Kazuo Nakajima

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Multicrystalline SiGe (mc-SiGe) with microscopic compositional distribution, which has been proposed as a promising material for solar cell applications, was characterized by microscopic Raman spectroscopy. As expected, a strong spatial variation of Raman spectra was observed. However, the compositional distribution obtained by a separate energy-dispersive X-ray analysis did not fully explain the observed spatial variation of Raman spectra. A plausible explanation of the inconsistency is the existence of built-in strain, which originates from the lattice mismatch between Si and Ge.

Original languageEnglish
Pages (from-to)4462-4465
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number7 A
Publication statusPublished - 2002 Jul 1

Keywords

  • Microscopic compositional distribution
  • Multicrystalline SiGe
  • Solar cell
  • Strain

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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