Evidence of layered transport of bulk carriers in Fe-doped Bi2Se3 topological insulators

Jun Ge, Taishi Chen, Ming Gao, Xuefeng Wang, Xingchen Pan, Meng Tang, Bo Zhao, Jun Du, Fengqi Song, Yongbing Xu, Rong Zhang

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

We observe quantized Hall plateaus and Shubnikov de Haas oscillations in 10 at% Fe-doped Bi2Se3 flakes. All the features of the quantum transport coincide while normalizing the field-angle variable magnetoresistance to the perpendicular direction. The Hall step gives a specific contribution of ~1 e2/h per quintuple layer. This reveals a two-dimensional (2D) transport of the bulk electrons in the topological insulators. The crystal is demonstrated with an obvious ferromagnetism. Further evidences including a Berry phase of zero, a weak localization and a large effective mass rule out the contribution of the topological surface states (SS), suggesting that a great care should be taken to pindown the transport of the topological SS in topological insulators.

Original languageEnglish
Pages (from-to)29-33
Number of pages5
JournalSolid State Communications
Volume211
DOIs
Publication statusPublished - 2015 Jun 1
Externally publishedYes

Keywords

  • A. Topological insulators
  • D. Ferromagnetism
  • D. Magnetoresistance
  • D. Shubnikov de Haas oscillations

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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