Evidence of Fermi level control in a half-metallic Heusler compound Co 2 MnSi by Al-doping: Comparison of measurements with first-principles calculations

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Abstract

The Fermi level (EF) control of half-metallic Heusler alloy Co2 MnSi by Al-doping was challenged in magnetic tunnel junctions with a Co2 MnAlx Si1-x (CMAS) electrode. The observed bias voltage dependence on tunneling conductance (G-V curves) clearly shows a shift in EF toward the center of the half-metallic gap with x, which showed excellent agreement with our first-principles calculations. However, the ratio of tunnel magnetoresistance (TMR) at 10 K to that at room temperature does not exhibit a remarkable change with x. The weak exchange energy at the CMAS interface may be the origin for the large temperature dependence of the TMR ratio.

Original languageEnglish
Article number144422
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume81
Issue number14
DOIs
Publication statusPublished - 2010 Apr 22

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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