Abstract
The extraordinary kink effects was experimentally observed in back-gate transconductance gm2 characteristics of fully-depleted (FD) silicon on insulator (SOI) MOSFET on high dose SIMOX wafers. The presence of energetically-localized trap states at the SOI-BOX interface of high-dose SIMOX wafers are revealed. A physical explanation are presented.
Original language | English |
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Pages | 48-49 |
Number of pages | 2 |
Publication status | Published - 1999 Dec 1 |
Event | The 25th Annual IEEE International Silicon-on-Insualtor (SOI) Conference - Rohnert Park, CA, USA Duration: 1999 Oct 4 → 1999 Oct 7 |
Other
Other | The 25th Annual IEEE International Silicon-on-Insualtor (SOI) Conference |
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City | Rohnert Park, CA, USA |
Period | 99/10/4 → 99/10/7 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering