Evidence of energetically-localized trap-states at SOI-BOX interface in high-dose SIMOX wafers

Takeo Ushiki; Koji Kotani; Toshihiko Funaki; Kunihiro Kawai; Tadahiro Ohmi

Evidence of energetically-localized trap-states at SOI-BOX interface in high-dose SIMOX wafers

Takeo Ushiki, Koji Kotani, Toshihiko Funaki, Kunihiro Kawai, Tadahiro Ohmi

ENG - Electronic Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

The extraordinary kink effects was experimentally observed in back-gate transconductance g_m2 characteristics of fully-depleted (FD) silicon on insulator (SOI) MOSFET on high dose SIMOX wafers. The presence of energetically-localized trap states at the SOI-BOX interface of high-dose SIMOX wafers are revealed. A physical explanation are presented.

Original language	English
Pages	48-49
Number of pages	2
Publication status	Published - 1999 Dec 1
Event	The 25th Annual IEEE International Silicon-on-Insualtor (SOI) Conference - Rohnert Park, CA, USA Duration: 1999 Oct 4 → 1999 Oct 7

Other

Other	The 25th Annual IEEE International Silicon-on-Insualtor (SOI) Conference
City	Rohnert Park, CA, USA
Period	99/10/4 → 99/10/7

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

Evidence of energetically-localized trap-states at SOI-BOX interface in high-dose SIMOX wafers. / Ushiki, Takeo; Kotani, Koji; Funaki, Toshihiko; Kawai, Kunihiro; Ohmi, Tadahiro.

1999. 48-49 Paper presented at The 25th Annual IEEE International Silicon-on-Insualtor (SOI) Conference, Rohnert Park, CA, USA.

Research output: Contribution to conference › Paper › peer-review

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title = "Evidence of energetically-localized trap-states at SOI-BOX interface in high-dose SIMOX wafers",

abstract = "The extraordinary kink effects was experimentally observed in back-gate transconductance gm2 characteristics of fully-depleted (FD) silicon on insulator (SOI) MOSFET on high dose SIMOX wafers. The presence of energetically-localized trap states at the SOI-BOX interface of high-dose SIMOX wafers are revealed. A physical explanation are presented.",

author = "Takeo Ushiki and Koji Kotani and Toshihiko Funaki and Kunihiro Kawai and Tadahiro Ohmi",

year = "1999",

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AU - Ushiki, Takeo

AU - Kotani, Koji

AU - Funaki, Toshihiko

AU - Kawai, Kunihiro

AU - Ohmi, Tadahiro

PY - 1999/12/1

Y1 - 1999/12/1

N2 - The extraordinary kink effects was experimentally observed in back-gate transconductance gm2 characteristics of fully-depleted (FD) silicon on insulator (SOI) MOSFET on high dose SIMOX wafers. The presence of energetically-localized trap states at the SOI-BOX interface of high-dose SIMOX wafers are revealed. A physical explanation are presented.

AB - The extraordinary kink effects was experimentally observed in back-gate transconductance gm2 characteristics of fully-depleted (FD) silicon on insulator (SOI) MOSFET on high dose SIMOX wafers. The presence of energetically-localized trap states at the SOI-BOX interface of high-dose SIMOX wafers are revealed. A physical explanation are presented.

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UR - http://www.scopus.com/inward/citedby.url?scp=0033332057&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0033332057

SP - 48

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T2 - The 25th Annual IEEE International Silicon-on-Insualtor (SOI) Conference

Y2 - 4 October 1999 through 7 October 1999

ER -

Evidence of energetically-localized trap-states at SOI-BOX interface in high-dose SIMOX wafers

Abstract

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ASJC Scopus subject areas

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