Evidence of energetically-localized trap-states at SOI-BOX interface in high-dose SIMOX wafers

Takeo Ushiki, Koji Kotani, Toshihiko Funaki, Kunihiro Kawai, Tadahiro Ohmi

Research output: Contribution to conference › Paper

Abstract

The extraordinary kink effects was experimentally observed in back-gate transconductance gm2 characteristics of fully-depleted (FD) silicon on insulator (SOI) MOSFET on high dose SIMOX wafers. The presence of energetically-localized trap states at the SOI-BOX interface of high-dose SIMOX wafers are revealed. A physical explanation are presented.

Original languageEnglish
Pages48-49
Number of pages2
Publication statusPublished - 1999 Dec 1
EventThe 25th Annual IEEE International Silicon-on-Insualtor (SOI) Conference - Rohnert Park, CA, USA
Duration: 1999 Oct 4 → 1999 Oct 7

Other

OtherThe 25th Annual IEEE International Silicon-on-Insualtor (SOI) Conference
CityRohnert Park, CA, USA
Period99/10/4 → 99/10/7

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Ushiki, T., Kotani, K., Funaki, T., Kawai, K., & Ohmi, T. (1999). Evidence of energetically-localized trap-states at SOI-BOX interface in high-dose SIMOX wafers. 48-49. Paper presented at The 25th Annual IEEE International Silicon-on-Insualtor (SOI) Conference, Rohnert Park, CA, USA, .