Evidence for carrier-induced high-TC ferromagnetism in Mn-doped GaN film

S. Yoshii, S. Sonoda, T. Yamamoto, T. Kashiwagi, M. Hagiwara, Y. Yamamoto, Y. Akasaka, K. Kindo, H. Hori

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

A GaN film doped with 8.2% Mn was grown by the molecular-beam-epitaxy technique. Magnetization measurements show that this highly Mn-doped GaN film exhibits ferromagnetism above room temperature. It is also revealed that the high-temperature ferromagnetic state is significantly suppressed below 10 K, accompanied by an increase of the electrical resistivity with decreasing temperature. This observation clearly demonstrates a close relation between the ferromagnetism with extremely high TC and the carrier transport in the Mn-doped GaN film.

Original languageEnglish
Article number37006
JournalEPL
Volume78
Issue number3
DOIs
Publication statusPublished - 2007 May 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Evidence for carrier-induced high-T<sub>C</sub> ferromagnetism in Mn-doped GaN film'. Together they form a unique fingerprint.

Cite this