Evidence for a shallow muonium acceptor state in Ge-rich Cz-Si1 - x Gex

B. R. Carroll, R. L. Lichti, Y. G. Celebi, K. H. Chow, P. J.C. King, I. Yonenaga

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

We have observed muon spin rotation (μ SR) features that are consistent with a shallow muonium (Mu) acceptor state for several Ge-rich silicon germanium alloy compositions. The MuT [0 / -] defect level crosses into the valence band at a Ge content of roughly 92%, indicating that a shallow acceptor state should be formed for muons that stop in the acceptor related T-site. For Si0.09 Ge0.91, the difference between the diamagnetic amplitudes from RF-driven resonance measurements compared to TF- μ SR indicates a slowly formed state at temperatures below 50 K, consistent with a valence-band resonant Mu- that would form the core of a shallow Mu acceptor. We report a summary of hyperfine characterization and transition energies of the various T-site muonium states in Ge-rich alloys and discuss options for the conditions under which shallow acceptor states may be observed by μ SR.

Original languageEnglish
Pages (from-to)5113-5116
Number of pages4
JournalPhysica B: Condensed Matter
Volume404
Issue number23-24
DOIs
Publication statusPublished - 2009 Dec 15

Keywords

  • Hydrogen
  • Muonium
  • Shallow acceptors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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