Even-denominator fractional quantum Hall physics in ZnO

J. Falson, D. Maryenko, B. Friess, D. Zhang, Y. Kozuka, A. Tsukazaki, J. H. Smet, M. Kawasaki

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Abstract

The fractional quantum Hall (FQH) effect emerges in high-quality two-dimensional electron systems exposed to a magnetic field when the Landau-level filling factor, 1/2 e, takes on a rational value. Although the overwhelming majority of FQH states have odd-denominator fillings, the physical properties of the rare and fragile even-denominator states are most tantalizing in view of their potential relevance for topological quantum computation. For decades, GaAs has been the preferred host for studying these even-denominator states, where they occur at - 1/2 e = 5/2 and 7/2. Here we report an anomalous series of quantized even-denominator FQH states outside the realm of III-V semiconductors in the MgZnO/ZnO 2DES electron at - 1/2 e = 3/2 and 7/2, with precursor features at 9/2; all while the 5/2 state is absent. The effect in this material occurs concomitantly with tunability of the orbital character of electrons at the chemical potential, thereby realizing a new experimental means for investigating these exotic ground states.

Original languageEnglish
Pages (from-to)347-351
Number of pages5
JournalNature Physics
Volume11
Issue number4
DOIs
Publication statusPublished - 2015 Apr 8

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Falson, J., Maryenko, D., Friess, B., Zhang, D., Kozuka, Y., Tsukazaki, A., Smet, J. H., & Kawasaki, M. (2015). Even-denominator fractional quantum Hall physics in ZnO. Nature Physics, 11(4), 347-351. https://doi.org/10.1038/nphys3259