Evaluation of the effectiveness of back-side damage gettering in silicon introduced by a cavitating jet

H. Kumano, T. Sasaki, Hitoshi Soyama

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

Photocapacitance measurements have been performed to evaluate the electrical effectiveness of gettering by back-side damage, introduced by a cavitating jet into silicon wafers. The silicon wafers, which had their back sides damaged previously in localized areas, were intentionally contaminated and subsequently thermally treated to diffuse the contamination through the wafer. The density of deep levels varied between the areas with back-side damage and those without. The results obtained on back-side damaged areas were closer to those on the original starting material. These results confirm that the back-side damage introduced by a cavitating jet can function as gettering sites.

Original languageEnglish
Pages (from-to)3935-3937
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number17
DOIs
Publication statusPublished - 2004 Oct 25

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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