Evaluation of the change of the residual stress in nano-scale transistors during the deposition and fine patterning processes of thin films

Kota Nakahira, Hironori Tago, Hiroki Kishi, Ken Suzuki, Hideo Miura, Masaki Yoshimaru, Ken Ichiro Tatsuuma

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The embedded strain gauges in a PQC-TEG were applied to the measurement of the change of the residual stress in a transistor structure with a 50-nm wide gate during thin film processing. The change of the residual stress was successfully monitored through the process such as the deposition and etching of thin films. In addition, the fluctuation of the process such as the intrinsic stress of thin films and the height and the width of the etched structures was also detected by the statistical analysis of the measured data. The sensitivity of the measurement was 1 MPa and it was validated that the amplitude of the fluctuation exceeded 100 MPa. This technique is also effective for detecting the spatial distribution of the stress in a wafer and its fluctuation among wafers.

Original languageEnglish
Title of host publication2011 12th Int. Conf. on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2011
DOIs
Publication statusPublished - 2011 Jun 7
Event2011 12th Int. Conf. on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2011 - Linz, Austria
Duration: 2011 Apr 182011 Apr 20

Publication series

Name2011 12th Int. Conf. on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2011

Other

Other2011 12th Int. Conf. on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2011
CountryAustria
CityLinz
Period11/4/1811/4/20

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Modelling and Simulation

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    Nakahira, K., Tago, H., Kishi, H., Suzuki, K., Miura, H., Yoshimaru, M., & Tatsuuma, K. I. (2011). Evaluation of the change of the residual stress in nano-scale transistors during the deposition and fine patterning processes of thin films. In 2011 12th Int. Conf. on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2011 [5765760] (2011 12th Int. Conf. on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2011). https://doi.org/10.1109/ESIME.2011.5765760