Evaluation of the change of the residual stress in nano-scale transistors during the deposition and fine patterning processes of thin films

Kota Nakahira; Hironori Tago; Hiroki Kishi; Ken Suzuki; Hideo Miura; Masaki Yoshimaru; Ken Ichiro Tatsuuma

doi:10.1109/ESIME.2011.5765760

Evaluation of the change of the residual stress in nano-scale transistors during the deposition and fine patterning processes of thin films

Kota Nakahira, Hironori Tago, Hiroki Kishi, Ken Suzuki, Hideo Miura, Masaki Yoshimaru, Ken Ichiro Tatsuuma

ENG - Fracture and Reliability Research Institute

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The embedded strain gauges in a PQC-TEG were applied to the measurement of the change of the residual stress in a transistor structure with a 50-nm wide gate during thin film processing. The change of the residual stress was successfully monitored through the process such as the deposition and etching of thin films. In addition, the fluctuation of the process such as the intrinsic stress of thin films and the height and the width of the etched structures was also detected by the statistical analysis of the measured data. The sensitivity of the measurement was 1 MPa and it was validated that the amplitude of the fluctuation exceeded 100 MPa. This technique is also effective for detecting the spatial distribution of the stress in a wafer and its fluctuation among wafers.

Original language	English
Title of host publication	2011 12th Int. Conf. on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2011
DOIs	https://doi.org/10.1109/ESIME.2011.5765760
Publication status	Published - 2011 Jun 7
Event	2011 12th Int. Conf. on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2011 - Linz, Austria Duration: 2011 Apr 18 → 2011 Apr 20

Publication series

Name	2011 12th Int. Conf. on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2011

Other

Other	2011 12th Int. Conf. on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2011
Country/Territory	Austria
City	Linz
Period	11/4/18 → 11/4/20

ASJC Scopus subject areas

Electrical and Electronic Engineering
Modelling and Simulation

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10.1109/ESIME.2011.5765760

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Nakahira, K., Tago, H., Kishi, H., Suzuki, K., Miura, H., Yoshimaru, M., & Tatsuuma, K. I. (2011). Evaluation of the change of the residual stress in nano-scale transistors during the deposition and fine patterning processes of thin films. In 2011 12th Int. Conf. on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2011 [5765760] (2011 12th Int. Conf. on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2011). https://doi.org/10.1109/ESIME.2011.5765760

Evaluation of the change of the residual stress in nano-scale transistors during the deposition and fine patterning processes of thin films. / Nakahira, Kota; Tago, Hironori; Kishi, Hiroki et al.

2011 12th Int. Conf. on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2011. 2011. 5765760 (2011 12th Int. Conf. on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2011).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nakahira, K, Tago, H, Kishi, H, Suzuki, K , Miura, H, Yoshimaru, M & Tatsuuma, KI 2011, Evaluation of the change of the residual stress in nano-scale transistors during the deposition and fine patterning processes of thin films. in 2011 12th Int. Conf. on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2011., 5765760, 2011 12th Int. Conf. on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2011, 2011 12th Int. Conf. on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2011, Linz, Austria, 11/4/18. https://doi.org/10.1109/ESIME.2011.5765760

Nakahira K, Tago H, Kishi H, Suzuki K , Miura H, Yoshimaru M et al. Evaluation of the change of the residual stress in nano-scale transistors during the deposition and fine patterning processes of thin films. In 2011 12th Int. Conf. on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2011. 2011. 5765760. (2011 12th Int. Conf. on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2011). doi: 10.1109/ESIME.2011.5765760

Nakahira, Kota ; Tago, Hironori ; Kishi, Hiroki et al. / Evaluation of the change of the residual stress in nano-scale transistors during the deposition and fine patterning processes of thin films. 2011 12th Int. Conf. on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2011. 2011. (2011 12th Int. Conf. on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2011).

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title = "Evaluation of the change of the residual stress in nano-scale transistors during the deposition and fine patterning processes of thin films",

abstract = "The embedded strain gauges in a PQC-TEG were applied to the measurement of the change of the residual stress in a transistor structure with a 50-nm wide gate during thin film processing. The change of the residual stress was successfully monitored through the process such as the deposition and etching of thin films. In addition, the fluctuation of the process such as the intrinsic stress of thin films and the height and the width of the etched structures was also detected by the statistical analysis of the measured data. The sensitivity of the measurement was 1 MPa and it was validated that the amplitude of the fluctuation exceeded 100 MPa. This technique is also effective for detecting the spatial distribution of the stress in a wafer and its fluctuation among wafers.",

author = "Kota Nakahira and Hironori Tago and Hiroki Kishi and Ken Suzuki and Hideo Miura and Masaki Yoshimaru and Tatsuuma, {Ken Ichiro}",

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AU - Nakahira, Kota

AU - Tago, Hironori

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AU - Suzuki, Ken

AU - Miura, Hideo

AU - Yoshimaru, Masaki

AU - Tatsuuma, Ken Ichiro

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AB - The embedded strain gauges in a PQC-TEG were applied to the measurement of the change of the residual stress in a transistor structure with a 50-nm wide gate during thin film processing. The change of the residual stress was successfully monitored through the process such as the deposition and etching of thin films. In addition, the fluctuation of the process such as the intrinsic stress of thin films and the height and the width of the etched structures was also detected by the statistical analysis of the measured data. The sensitivity of the measurement was 1 MPa and it was validated that the amplitude of the fluctuation exceeded 100 MPa. This technique is also effective for detecting the spatial distribution of the stress in a wafer and its fluctuation among wafers.

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Evaluation of the change of the residual stress in nano-scale transistors during the deposition and fine patterning processes of thin films

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