TY - GEN
T1 - Evaluation of the change of the residual stress in nano-scale transistors during the deposition and fine patterning processes of thin films
AU - Nakahira, Kota
AU - Tago, Hironori
AU - Kishi, Hiroki
AU - Suzuki, Ken
AU - Miura, Hideo
AU - Yoshimaru, Masaki
AU - Tatsuuma, Ken Ichiro
PY - 2011/6/7
Y1 - 2011/6/7
N2 - The embedded strain gauges in a PQC-TEG were applied to the measurement of the change of the residual stress in a transistor structure with a 50-nm wide gate during thin film processing. The change of the residual stress was successfully monitored through the process such as the deposition and etching of thin films. In addition, the fluctuation of the process such as the intrinsic stress of thin films and the height and the width of the etched structures was also detected by the statistical analysis of the measured data. The sensitivity of the measurement was 1 MPa and it was validated that the amplitude of the fluctuation exceeded 100 MPa. This technique is also effective for detecting the spatial distribution of the stress in a wafer and its fluctuation among wafers.
AB - The embedded strain gauges in a PQC-TEG were applied to the measurement of the change of the residual stress in a transistor structure with a 50-nm wide gate during thin film processing. The change of the residual stress was successfully monitored through the process such as the deposition and etching of thin films. In addition, the fluctuation of the process such as the intrinsic stress of thin films and the height and the width of the etched structures was also detected by the statistical analysis of the measured data. The sensitivity of the measurement was 1 MPa and it was validated that the amplitude of the fluctuation exceeded 100 MPa. This technique is also effective for detecting the spatial distribution of the stress in a wafer and its fluctuation among wafers.
UR - http://www.scopus.com/inward/record.url?scp=79957885577&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79957885577&partnerID=8YFLogxK
U2 - 10.1109/ESIME.2011.5765760
DO - 10.1109/ESIME.2011.5765760
M3 - Conference contribution
AN - SCOPUS:79957885577
SN - 9781457701078
T3 - 2011 12th Int. Conf. on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2011
BT - 2011 12th Int. Conf. on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2011
T2 - 2011 12th Int. Conf. on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2011
Y2 - 18 April 2011 through 20 April 2011
ER -