Evaluation of temperature dependence and lifetime of 79GHz power amplifier

Chen Yang Li, Takeshi Yoshida, Kosuke Katayama, Mizuki Motoyoshi, Kyoya Takano, Shuhei Amakawa, Minoru Fujishima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A 79 GHz power amplifier (PA) using 4-stages common-source structure is presented in this paper. To evaluate temperature dependence of circuit characteristics, the PA is measured at various temperatures. At room temperature (RT) and 100°C, the saturated output power is 7.6 and 7.1dBm, the maximum PAE is 6.2% and 4.9%, respectively. The reliability and lifetime of PA is also obtained. To the author's knowledge, this is the first paper to show the lifetime results of PA at two different biases in 40nm CMOS process.

Original languageEnglish
Title of host publicationIMFEDK 2013 - 2013 International Meeting for Future of Electron Devices, Kansai
Pages100-101
Number of pages2
DOIs
Publication statusPublished - 2013 Oct 21
Externally publishedYes
Event2013 11th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2013 - Osaka, Japan
Duration: 2013 Jun 52013 Jun 6

Publication series

NameIMFEDK 2013 - 2013 International Meeting for Future of Electron Devices, Kansai

Conference

Conference2013 11th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2013
CountryJapan
CityOsaka
Period13/6/513/6/6

Keywords

  • CMOS
  • lifetime of PA
  • millimeter-wave
  • power amplifier
  • temperature dependence

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Li, C. Y., Yoshida, T., Katayama, K., Motoyoshi, M., Takano, K., Amakawa, S., & Fujishima, M. (2013). Evaluation of temperature dependence and lifetime of 79GHz power amplifier. In IMFEDK 2013 - 2013 International Meeting for Future of Electron Devices, Kansai (pp. 100-101). [6602258] (IMFEDK 2013 - 2013 International Meeting for Future of Electron Devices, Kansai). https://doi.org/10.1109/IMFEDK.2013.6602258