Evaluation of silicon- and carbon-face SiO2/SiC MOS interface quality based on scanning nonlinear dielectric microscopy

Norimichi Chinone; Alpana Nayak; Ryoji Kosugi; Yasunori Tanaka; Shinsuke Harada; Hajime Okumura; Yasuo Cho

doi:10.1063/1.4990865

Evaluation of silicon- and carbon-face SiO₂/SiC MOS interface quality based on scanning nonlinear dielectric microscopy

Norimichi Chinone, Alpana Nayak, Ryoji Kosugi, Yasunori Tanaka, Shinsuke Harada, Hajime Okumura, Yasuo Cho

Information Devices Division

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

A strong positive correlation was found between the trap density (D_it) at the SiO₂/SiC interface and signal variation in a scanning nonlinear dielectric microscopy (SNDM) image. Si-face and C-face SiC wafers with a 45-nm-thick oxide layer were examined by the conventional high-low method and SNDM, which is a type of scanning probe microscopy. The D_it value measured by the high-low method and the standard deviation of normalized SNDM images exhibited a strong positive correlation, which means that the standard deviation of the normalized SNDM image can be used as a universal measure of the SiO₂/SiC interface quality. Using this measure, a quick evaluation of D_it using SNDM is possible.

Original language	English
Article number	061602
Journal	Applied Physics Letters
Volume	111
Issue number	6
DOIs	https://doi.org/10.1063/1.4990865
Publication status	Published - 2017 Aug 7

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4990865

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title = "Evaluation of silicon- and carbon-face SiO2/SiC MOS interface quality based on scanning nonlinear dielectric microscopy",

abstract = "A strong positive correlation was found between the trap density (Dit) at the SiO2/SiC interface and signal variation in a scanning nonlinear dielectric microscopy (SNDM) image. Si-face and C-face SiC wafers with a 45-nm-thick oxide layer were examined by the conventional high-low method and SNDM, which is a type of scanning probe microscopy. The Dit value measured by the high-low method and the standard deviation of normalized SNDM images exhibited a strong positive correlation, which means that the standard deviation of the normalized SNDM image can be used as a universal measure of the SiO2/SiC interface quality. Using this measure, a quick evaluation of Dit using SNDM is possible.",

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T1 - Evaluation of silicon- and carbon-face SiO2/SiC MOS interface quality based on scanning nonlinear dielectric microscopy

AU - Chinone, Norimichi

AU - Nayak, Alpana

AU - Kosugi, Ryoji

AU - Tanaka, Yasunori

AU - Harada, Shinsuke

AU - Okumura, Hajime

AU - Cho, Yasuo

PY - 2017/8/7

Y1 - 2017/8/7

N2 - A strong positive correlation was found between the trap density (Dit) at the SiO2/SiC interface and signal variation in a scanning nonlinear dielectric microscopy (SNDM) image. Si-face and C-face SiC wafers with a 45-nm-thick oxide layer were examined by the conventional high-low method and SNDM, which is a type of scanning probe microscopy. The Dit value measured by the high-low method and the standard deviation of normalized SNDM images exhibited a strong positive correlation, which means that the standard deviation of the normalized SNDM image can be used as a universal measure of the SiO2/SiC interface quality. Using this measure, a quick evaluation of Dit using SNDM is possible.

AB - A strong positive correlation was found between the trap density (Dit) at the SiO2/SiC interface and signal variation in a scanning nonlinear dielectric microscopy (SNDM) image. Si-face and C-face SiC wafers with a 45-nm-thick oxide layer were examined by the conventional high-low method and SNDM, which is a type of scanning probe microscopy. The Dit value measured by the high-low method and the standard deviation of normalized SNDM images exhibited a strong positive correlation, which means that the standard deviation of the normalized SNDM image can be used as a universal measure of the SiO2/SiC interface quality. Using this measure, a quick evaluation of Dit using SNDM is possible.

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Evaluation of silicon- and carbon-face SiO₂/SiC MOS interface quality based on scanning nonlinear dielectric microscopy

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