Evaluation of Self-Heating Effect in Poly-Si TFT Using Quasi Three-Dimensional Temperature Analysis

M. Koyanagi, T. Shimatani, M. Tsuno, T. Matsumoto, N. Kato, S. Yamada

Research output: Contribution to journalConference articlepeer-review

6 Citations (Scopus)

Abstract

A new poly-Si TFT device simulator with quasi three- dimensional (3D) temperature analysis has been developed. The device characteristic changes caused by the self heating effect in poly-Si TFTs are successfully modeled using this simulator. The influences of various device parameters on the temperature rise caused by the self heating are evaluated in detail. It is found that the substrate materials, the poly-Si thickness and the design rule have significant influences on the temperature rise. It is also confirmed that the temperature rise results in the increased drain current and further increase in the temperature rise gives rise to the reduced drain current. The increase of the drain current with the temperature rise in the moderately high drain current region is explained by the reduced barrier height at the grain boundary while the decrease of it in the considerably high drain current region is done by the decreased electron mobility inside the grain.

Original languageEnglish
Pages (from-to)97-100
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
Publication statusPublished - 1993
Externally publishedYes
EventProceedings of the 1993 IEEE International Electron Devices Meeting - Washington, DC, USA
Duration: 1993 Dec 51993 Dec 8

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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