Evaluation of scintillation properties of GaN

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12 Citations (Scopus)

Abstract

Optical and scintillation properties of GaN crystalline film were investigated. It showed 30-50% in-line transmittance at wavelength longer than 400 nm and intense emission appeared at 365 nm under 213 nm excitation in photoluminescence (PL) spectrum. When PL decay time was investigated under 280 and 200 nm excitation, luminescence decay time resulted few ns. In X-ray induced radioluminescence spectra, intense emission appeared at 365, 420, and 550 nm. The former one was ascribed to the exciton emission and the latter two would be due to defects related emission. Scintillation decay time of GaN was quite fast as few ns which was consistent with PL results and no slow component was observed.

Original languageEnglish
Pages (from-to)396-399
Number of pages4
Journale-Journal of Surface Science and Nanotechnology
Volume12
DOIs
Publication statusPublished - 2014 Aug 23

Keywords

  • Gallium nitride
  • Luminescence
  • Photoluminescence
  • Synchrotron radiation photoelectron spectroscopy
  • Visible/ultraviolet absorption spectroscopy

ASJC Scopus subject areas

  • Biotechnology
  • Bioengineering
  • Condensed Matter Physics
  • Mechanics of Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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