Evaluation of residual stress in a transistor using micron scale strain sensors

Takuya Sasaki, Nobuki Veta, Hideo Miura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Thermal and intrinsic stresses that occur during thin-fihn processing and assembly processes vary the residual stress in transistors. The residual stress causes the shift of electronic functions of dielectric and semiconductor materials and degrades their mechanical reliability. Therefore, it is ilnportant to Ineasure the residual stress in transistor structures. In this study, we have measured the local distribution of the residual stress on a transistor formation surface of an LSI chip assembled by using a flip chip structure with an area-arrayed metallic bumps by applying strain sensor chips. was found that the amplitude of the local residual stress distribution in the stacked chips reached about 250 MPa. This local stress distribution caused the local shift of electronic functions of transistors by about 10%. The residual stress in a transistor after thin-film processing was also measured by using these strain gauges. Transistor structures were formed on the gauges and the change of the stress was Ineasured by removing the thin films by focused ion beams. It was confirmed that both the thin film processing-induced stress and the assembly-induced stress affect the final residual stress in a transistor structure.

Original languageEnglish
Title of host publication2008 10th International Conference on Electronic Materials and Packaging, EMAP 2008
Pages247-250
Number of pages4
DOIs
Publication statusPublished - 2008 Dec 1
Event2008 10th International Conference on Electronic Materials and Packaging, EMAP 2008 - Taipei, Taiwan, Province of China
Duration: 2008 Oct 222008 Oct 24

Publication series

Name2008 10th International Conference on Electronic Materials and Packaging, EMAP 2008

Other

Other2008 10th International Conference on Electronic Materials and Packaging, EMAP 2008
CountryTaiwan, Province of China
CityTaipei
Period08/10/2208/10/24

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Mechanical Engineering

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  • Cite this

    Sasaki, T., Veta, N., & Miura, H. (2008). Evaluation of residual stress in a transistor using micron scale strain sensors. In 2008 10th International Conference on Electronic Materials and Packaging, EMAP 2008 (pp. 247-250). [4784275] (2008 10th International Conference on Electronic Materials and Packaging, EMAP 2008). https://doi.org/10.1109/EMAP.2008.4784275