Evaluation of power SiC-MOSFET using super-higher-order scanning nonlinear dielectric microscopy: Imaging of carrier distribution and depletion layer

N. Chinone, Y. Cho, T. Nakamura

Research output: Contribution to conferencePaperpeer-review

Abstract

Evaluation techniques for semiconductor devices are keys for device development with low cost and short time to market. Especially, dopant and depletion layer distribution in devices is a critical electrical property that needs to be evaluated. Super-higher-order nonlinear dielectric microscopy (SHO-SNDM) is one of the promising techniques for semiconductor device evaluation. We developed a method for imaging detailed dopant distribution and depletion layers in semiconductor devices using SHO-SNDM. As a demonstration, a cross-section of a SiC power semiconductor device was measured by this method and detailed dopant distribution and depletion layer distributions were imaged.

Original languageEnglish
Pages289-292
Number of pages4
Publication statusPublished - 2014
Event40th International Symposium for Testing and Failure Analysis, ISTFA 2014 - Houston, United States
Duration: 2014 Nov 92014 Nov 13

Other

Other40th International Symposium for Testing and Failure Analysis, ISTFA 2014
Country/TerritoryUnited States
CityHouston
Period14/11/914/11/13

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

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