Evaluation of piezoresistive property of vanadium oxide thin film

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper shows the evaluation of piezpresistive property of a vanadium oxide (VOx) film. The VOx film is deposited and patterned as a piezoresistor on an edge of suspended silicon (Si) membrane. The VOx resistor, electrode pads connected to the resistor, and the suspended membrane structure are fabricated using conventional microfabrication techniques. The resistance of the VOx resistor changes as the membrane is deflected. The deflection of the membrane is caused by evacuating to each differential pressure (from -0.02 to -0.05 by -0.01 MPa), and measured using a white-light interferometer. The resistance decreases as the strain is increased. The gauge factor of the deposited VOx is 259, which value is higher than general semiconductor materials such as Si. The feasibility of VOx as a focusing material for MEMS/NEMS application (ex. strain gauge) is indicated by our experiment.

Original languageEnglish
Title of host publication2018 IEEE Micro Electro Mechanical Systems, MEMS 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1044-1047
Number of pages4
ISBN (Electronic)9781538647820
DOIs
Publication statusPublished - 2018 Apr 24
Event31st IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2018 - Belfast, United Kingdom
Duration: 2018 Jan 212018 Jan 25

Publication series

NameProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
Volume2018-January
ISSN (Print)1084-6999

Other

Other31st IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2018
CountryUnited Kingdom
CityBelfast
Period18/1/2118/1/25

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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