Evaluation of performance in vertical 1T-DRAM and planar 1T-DRAM

Yuto Norifusa, Tetsuo Endoh

Research output: Contribution to journalArticle

Abstract

The performances of the conventional planar type 1T DRAM and the Vertical type 1T DRAM are compared based on structure difference using a fully-consistent device simulator. We discuss the structural advantage of the Vertical type 1T-DRAM in comparison with the conventional planar type 1T-DRAM, and evaluate their performance in each operating mode such as write, erase, read, and hold; and discuss its cell performances such as Cell Current Margin and data retention. These results provide a useful guideline designing the high performance Vertical type 1T-DRAM cell.

Original languageEnglish
Pages (from-to)847-853
Number of pages7
JournalIEICE Transactions on Electronics
VolumeE95-C
Issue number5
DOIs
Publication statusPublished - 2012 May

Keywords

  • Floating body DRAM
  • Planar type 1T-DRAM
  • Retention
  • Vertical type 1T-DRAM

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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