Evaluation of new amorphous hydrocarbon film for copper barrier dielectric film in low-k copper metallization

Hiraku Ishikawa, Toshihisa Nozawa, Takaaki Matsuoka, Akinobu Teramoto, Masaki Hirayama, Takashi Itoh, Tadahiro Ohmi

Research output: Contribution to journalArticle

Abstract

In recent ultra large-scale integration (ULSI), Cu wiring and low-k dielectrics are used to reduce resistive capacitive (RC) delay in interconnects. Cu diffusion barrier layers, such as SiC and SiCN, have relatively high k-values, thus they decrease effective k-values (keff) of dielectrics. For this issue, we propose a new amorphous hydrocarbon film (a-CHx) as a Cu barrier dielectric deposited using a microwave-excited plasma reactor with a showerhead. Low ion bombardments and optimum deposition gases gave an excellent film, which achieved low leakage current and thermal resistance simultaneously. This film showed Cu diffusion barrier ability at 350°C and a lifetime of more than 10 years lifetime at 0.2MV/cm, which is sufficient for next-generation interlayer dielectric films.

Original languageEnglish
Pages (from-to)2531-2534
Number of pages4
JournalJapanese journal of applied physics
Volume47
Issue number4 PART 2
DOIs
Publication statusPublished - 2008 Apr 25

Keywords

  • Barrier dielectric
  • Cu
  • Low-k
  • Multilevel interconnection

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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