TY - JOUR
T1 - Evaluation of new amorphous hydrocarbon film for copper barrier dielectric film in low-k copper metallization
AU - Ishikawa, Hiraku
AU - Nozawa, Toshihisa
AU - Matsuoka, Takaaki
AU - Teramoto, Akinobu
AU - Hirayama, Masaki
AU - Ito, Takashi
AU - Ohmi, Tadahiro
PY - 2008/4/25
Y1 - 2008/4/25
N2 - In recent ultra large-scale integration (ULSI), Cu wiring and low-k dielectrics are used to reduce resistive capacitive (RC) delay in interconnects. Cu diffusion barrier layers, such as SiC and SiCN, have relatively high k-values, thus they decrease effective k-values (keff) of dielectrics. For this issue, we propose a new amorphous hydrocarbon film (a-CHx) as a Cu barrier dielectric deposited using a microwave-excited plasma reactor with a showerhead. Low ion bombardments and optimum deposition gases gave an excellent film, which achieved low leakage current and thermal resistance simultaneously. This film showed Cu diffusion barrier ability at 350°C and a lifetime of more than 10 years lifetime at 0.2MV/cm, which is sufficient for next-generation interlayer dielectric films.
AB - In recent ultra large-scale integration (ULSI), Cu wiring and low-k dielectrics are used to reduce resistive capacitive (RC) delay in interconnects. Cu diffusion barrier layers, such as SiC and SiCN, have relatively high k-values, thus they decrease effective k-values (keff) of dielectrics. For this issue, we propose a new amorphous hydrocarbon film (a-CHx) as a Cu barrier dielectric deposited using a microwave-excited plasma reactor with a showerhead. Low ion bombardments and optimum deposition gases gave an excellent film, which achieved low leakage current and thermal resistance simultaneously. This film showed Cu diffusion barrier ability at 350°C and a lifetime of more than 10 years lifetime at 0.2MV/cm, which is sufficient for next-generation interlayer dielectric films.
KW - Barrier dielectric
KW - Cu
KW - Low-k
KW - Multilevel interconnection
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U2 - 10.1143/JJAP.47.2531
DO - 10.1143/JJAP.47.2531
M3 - Article
AN - SCOPUS:54249137307
VL - 47
SP - 2531
EP - 2534
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 PART 2
ER -