Evaluation of minority carrier diffusion length of undoped n-BaSi2 epitaxial thin films on Si(001) substrates by electron-beam-induced-current technique

Masakazu Baba, Kentaro Watanabe, Kosuke O. Hara, Kaoru Toko, Takashi Sekiguchi, Noritaka Usami, Takashi Suemasu

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)

Abstract

We have grown a 400-nm-thick undoped n-BaSi2 epitaxial film on an n-Si(001) substrate by molecular beam epitaxy, and evaluated the diffusion length of minority carriers (holes) by an electron-beam-induced-current (EBIC) technique in the edge-scan configuration. The EBIC line-scan profile showed an exponential dependence on the distance from the tungsten probe. The diffusion length of minority carriers in the n-BaSi2 film was found to be approximately 1.5 μm. This value is much smaller than that in undoped n-BaSi2 on Si(111).

Original languageEnglish
Article number078004
JournalJapanese journal of applied physics
Volume53
Issue number7
DOIs
Publication statusPublished - 2014 Jul

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Evaluation of minority carrier diffusion length of undoped n-BaSi2 epitaxial thin films on Si(001) substrates by electron-beam-induced-current technique'. Together they form a unique fingerprint.

Cite this