Evaluation of mev si implanted si using beam acoustic method

Hisato Ogiso, Shizuka Nakano, Yoshihiko Nagata, Kazushi Yamanaka, Toshio Koda

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

3 MeV Si ion implanted Si specimens were examined by photoacoustic microscopy, ion acoustic method, and scanning acoustic microcopy(SAM). The image of ion implanted region could be obtained from the phase of photoacoustic signal. Moreover, the velocity change of surface acoustic wave by ion implantation could be found from the V(z) curve measured by SAM. We assume that the cause of these results is a change of thermal conductivity and the elasticity modulus as a result of the ion implantation.

Original languageEnglish
Pages (from-to)250-252
Number of pages3
JournalJapanese journal of applied physics
Volume30
DOIs
Publication statusPublished - 1991 Jan

Keywords

  • Amorphous Si
  • Ion implantation
  • Ion-acoustic method
  • Photoacoustic method
  • Thermal conductivity
  • Velocity of surface acoustic wave

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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